2N3054 2N3054A www.centralsemi.com SILICON DESCRIPTION: NPN POWER TRANSISTORS The CENTRAL SEMICONDUCTOR 2N3054, 2N3054A devices are silicon NPN power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS C Collector-Base Voltage V 90 V CBO Collector-Emitter Voltage V 90 V CEV Collector-Emitter Voltage V 60 V CER Collector-Emitter Voltage V 55 V CEO Emitter-Base Voltage V 7.0 V EBO Continuous Collector Current I 4.0 A C Continuous Base Current I 2.0 A B Power Dissipation (2N3054) P 25 W D Power Dissipation (2N3054A) P 75 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance (2N3054) 7.0 C/W JC Thermal Resistance (2N3054A) 2.33 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V =90V, V=1.5V 1.0 mA CEV CE EB I V =90V, V =1.5V, T=150C 6.0 mA CEV CE EB C I V=30V 500 A CEO CE I V=7.0V 1.0 mA EBO EB BV I=100mA 55 V CEO C BV I =100mA, R=100 60 V CER C BE V I =500mA, I=50mA 1.0 V CE(SAT) C B V I =3.0A, I=1.0A 6.0 V CE(SAT) C B V V =4.0V, I=500mA 1.7 V BE(ON) CE C h V =4.0V, I=500mA 25 150 FE CE C h V =4.0V, I=3.0A 5.0 FE CE C h V =4.0V, I =100mA, f=1.0kHz 25 180 fe CE C f V =10V, I =200mA, f=1.0MHz 3.0 MHz T CE C f V =4.0V, I=100mA 30 kHz hfe CE C R2 (2-September 2014)2N3054 2N3054A SILICON NPN POWER TRANSISTORS TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R2 (2-September 2014) www.centralsemi.com