2N2918 www.centralsemi.com DUAL SILICON DESCRIPTION: NPN TRANSISTOR The CENTRAL SEMICONDUCTOR 2N2918 is a Dual Silicon NPN Transistor utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING: FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 45 V CBO Collector-Emitter Voltage V 45 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 30 mA C Power Dissipation (One Die) P 300 mW D Power Dissipation (Both Dice) P 500 mW D Power Dissipation (One Die, T=25C) P 750 mW C D Power Dissipation (Both Dice, T=25C) P 1.5 W C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=45V 10 nA CBO CB I V=5.0V 2.0 nA CEO CE I V=5.0V 2.0 nA EBO EB BV I=10A 45 V CBO C BV I=10mA 45 V CEO C BV I=10A 6.0 V EBO E V I =1.0mA, I=0.1mA 0.35 V CE(SAT) C B V V =5.0V, I=100A 0.70 V BE(ON) CE C h V =5.0V, I=10A 150 600 FE CE C h V =5.0V, I =10A, T=55C 30 FE CE C A h V =5.0V, I=100A 225 FE CE C h V =5.0V, I=1.0mA 300 FE CE C f V =5.0V, I =500A, f=20MHz 60 MHz T CE C C V =5.0V, I =0, f=140kHz 6.0 pF ob CB E NF V =5.0V, I =10A, R =10k, CE C S f=1.0kHz, BW=200Hz 3.0 dB h /h V =5.0V, I=100A 0.8 1.0 FE1 FE2 CE C V -V V =5.0V, I=10A 10 mV BE1 BE2 CE C V -V V =5.0V, I=100A 5.0 mV BE1 BE2 CE C V -V V =5.0V, I=1.0mA 10 mV BE1 BE2 CE C (V -V ) V =5.0V, I =100A, T =55C to +25C 1.6 mV BE1 BE2 CE C A (V -V ) V =5.0V, I =100A, T =+25C to +125C 2.0 mV BE1 BE2 CE C A R1 (4-March 2011)2N2918 DUAL SILICON NPN TRANSISTOR TO-78 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R1 (4-March 2011) www.centralsemi.com