Product Information

UPC8179TB-E3-A

UPC8179TB-E3-A electronic component of CEL

Datasheet
RF Amp Chip Single GP 2.4GHz 3.3V 6-Pin SOT-363 T/R

Manufacturer: CEL
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Price (USD)

3000: USD 0.7091 ea
Line Total: USD 2127.3

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.7091

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
Gain
Operating Supply Voltage
NF - Noise Figure
Minimum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Brand
Number Of Channels
Input Return Loss
Isolation Db
Factory Pack Quantity :
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SILICON RFIC LOW CURRENT AMPLIFIER UPC8179TB FOR MOBILE COMMUNICATIONS FEATURES POWER GAIN vs. FREQUENCY HIGH DENSITY SURFACE MOUNTING: +20 6 Pin Super Minimold Package (2.0 x 1.25 x 0.9 mm) VCC = 3.0 V 2.4 GHz TA = -40C SUPPLY VOLTAGE: +10 TA = +25C VCC = 2.4 to 3.3 V TA = +85C 0 HIGH EFFICIENCY: PO(1dB) = +3.0 dBm TYP at f = 1.0 GHz PO(1dB) = +1.5 dBm TYP at f = 1.9 GHz 10 PO(1dB) = +1.0 dBm TYP at f = 2.4 GHz 20 POWER GAIN: GP = 13.5 dB TYP at f = 1.0 GHz 1.0 GHz 30 GP = 15.5 dB TYP at f = 1.9 GHz 1.9 GHz GP = 15.5 dB TYP at f = 2.4 GHz 40 EXCELLENT ISOLATION: 0.1 0.3 1.0 3.0 ISL = 44 dB TYP at f = 1.0 GHz Output match for best performance ISL = 42 dB TYP at f = 1.9 GHz at each frequency ISL = 41 dB TYP at f = 2.4 GHz LOW CURRENT CONSUMPTION: ICC = 4.0 mA TYP AT VCC = 3.0 V DESCRIPTION OPERATING FREQUENCY: ICC = 4.0 mA TYP AT VCC = 3.0 V NEC s UPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can LIGHT WEIGHT: 7 mg (standard Value) realize low current consumption with external chip inductor which can be realized on internal 50 wideband matched IC. This low current amplifier uns on 3.0 V. This IC is manufactured APPLICATIOIN using NEC s 30 GHz fMAX UHS0 (Ultra High Speed Process) silicon bipolar process. This process uses direct silicon nitride Buffer amplifiers for 0.1 to 2.4 GHz mobile communications passivation film and gold electrodes. These materials can systems. protect the chip surface from pollution and prevent corrosion/ migration. Thus this IC has exellent performance uniformity and reliability. ELECTRICAL CHARACTERISTICS, (Unless otherwise specified, TA = +25C, VCC = VOUT = 3.0 V, ZS = ZL = 50 , at LC matched Frequency) PART NUMBER UPC8179TB PACKAGE OUTLINE S06 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICC Circuit Current (no input signal) mA 2.9 4.0 5.4 GP Power Gain, f = 1.0 GHz, PIN = -30 dBm dB 11.0 13.5 15.5 f = 1.9 GHz, PIN = -30 dBm 13.0 15.5 17.5 f = 2.4 GHz, PIN = -30 dBm 13.0 15.5 17.5 ISOL Isolation, f = 1.0 GHz, PIN = -30 dBm dB 39.0 44.0 f = 1.9 GHz, PIN = -30 dBm 37.0 42.0 f = 2.4 GHz, PIN = -30 dBm 36.0 41.0 P1dB Output Power at f = 1.0 GHz dB -0.5 3.0 1 dB gain f = 1.9 GHz -2.0 1.5 compression, f = 2.4 GHz -3.0 1.0 NF Noise Figure, f = 1.0 GHz dB 5.0 6.5 f = 1.9 GHz 5.0 6.5 f = 2.4 GHz 5.0 6.5 RLIN Input Return Loss, f = 1.0 GHz, PIN = -30 dBm dB 4.0 7.0 (without matching f = 1.9 GHz, PIN = -30 dBm 4.0 7.0 circuit) f = 2.4 GHz, PIN = -30 dBm 6.0 9.0 California Eastern LaboratoriesUPC8179TB 1 ABSOLUTE MAXIMUM RATINGS (TA = 25C) RECOMMENDED SYMBOLS PARAMETERS UNITS RATINGS OPERATING CONDITIONS VCC Supply Voltage, Pins 4 & 6 V 3.6 SYMBOLS PARAMETERS UNITS MIN TYP MAX ICC Circuit Current mA 15 VCC Supply Voltage V 2.7 3.0 3.3 2 PD Power Dissipation mW 270 TA Operating Ambient C -40 +25 +85 Temperature TOP Operating Temperature C -40 to +85 TSTG Storage Temperature C -55 to +150 PIN Input Power dBm +5 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB (TA = +85C). PIN FUNCTIONS Pin No. Symbol Pin Voltage Description Internal Equivalent Circuit Signal Input Pin. A internal 1.09 V 1 INPUT matching circuit, configured with resistors, enable 50 W connection over a wide band. This pin must be coupled to signal source with 6 capacitor for DC cut. 4 2 GND through external inductor Ground pin. This pin should be 3 connected to the system ground with 5 minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance difference. 2 Signal output pin. This pin is 4 OUTPUT Same as VCC voltage designed as collector output. Due to the high impedance output, this 3 1 5 pin should be externally equipped with matching LC matching circuit to next stage. For L, a size 1005 chip inductor can be chosen. Power supply pin. This pin should 6VCC 2.4 to 3.3 be externally equipped with bypass capacitor to minimize its impedance. TYPICAL PERFORMANCE CURVES (Unless otherwise specified, TA = 25C) CIRCUIT CURRENT vs. VOLTAGE CIRCUIT CURRENT vs. TEMPERATURE 5 5 No signals No signals Vcc = 3.0 V 4 4 3 3 2 2 1 1 0 0 2 34 0 1 60 40 20 0 +20 +40 +60 +80 +100 Voltage, VCC (V) Temperature, TA (C) Circuit Current, ICC (mA) Circuit Current, ICC (mA)

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
California Eastern Laboratories
CALIFORNIA MICRO DEV

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