ATF-551M4 Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Description Features Avago Technologies ATF-551M4 is a high dynamic Very low noise figure and high linearity range, super low noise, single supply E-pHEMT GaAs 1 Single Supply Enhancement Mode Technology FET housed in a thin miniature leadless package. optimized for 3V operation The combination of small device size, super low noise Excellent uniformity in product specifications (under 1 dB Fmin from 2 to 6 GHz), high linearity and 400 micron gate width low power makes the ATF-551M4 ideal for LNA or hybrid Thin miniature package 1.4 mm x 1.2 mm x 0.7 mm module designs in wireless receiver in the 450 MHz to 10 GHz frequency band. Tape-and-reel packaging option available Applications include Cellular/PCS/ WCDMA handsets Specifications and data modem cards, fixed wireless infrastructure 2 GHz 2.7V, 10 mA (typ.) in the 2.4, 3.5 GHz and UNII frequency bands, as well as 2.4 GHz 802.11b, 5 GHz 802.11a and HIPERLAN/2 rd 24.1 dBm output 3 order intercept Wireless LAN PC-cards. 14.6 dBm output power at 1 dB gain compression Note: 0.5 dB noise figure 1. Avagos enhancement mode E-pHEMT devices are the first com - 17.5 dB associated gain mercially available single-supply GaAs transistors that do not need a negative gate bias voltage for operation. They can help simplify Applications the design and reduce the cost of receivers and transmitters in many applications in the 450 MHz to 10 GHz frequency range. Low Noise Amplifier for: Cellular/PCS/WCDMA handsets and modem cards MiniPak 1.4 mm x 1.2 mm Package 2.4 GHz, 3.5 GHz and UNII fixed wireless infrastructure 2.4 GHz 802.11b Wireless LAN 5 GHz 802.11a and HIPERLAN Wireless LAN General purpose discrete E-pHEMT for other ultra low noise applications Pin Connections and Package Marking Drain Source Pin 3 Pin 4 Vx Gate Source Pin 2 Pin 1 Note: Top View. Package marking provides orientation, product identifica - tion and date code. V = Device Type Code x = Date code character. A different character is assigned for each month and year. Vx 1 ATF-551M4 Absolute Maximum Ratings Symbol Parameter Units Absolute Maximum 2 V Drain-Source Voltage V 5 DS 2 V Gate-Source Voltage V -5 to +1 GS 2 V Gate Drain Voltage V -5 to +1 GD 2 I Drain Current mA 100 DS 5 I Gate Current mA 1 GS 3 P Total Power Dissipation mW 270 diss P RF Input Power in max. (Vd=2.7V, Id=10mA) dBm 10 (Vd=0V, Id=0mA) dBm 10 T Channel Temperature C 150 CH T Storage Temperature C -65 to 150 STG 4 Thermal Resistance C/W 240 jc Notes: 70 1. Operation of this device above any one of these parameters may 0.7V cause permanent damage. 60 2. Assumes DC quiescent conditions. 50 3. Source lead temperature is 25C. Derate 4.2 mW/C for T > 85C. L 4. Thermal resistance measured using 150C Liquid Crystal Measure- 0.6V 40 ment method. 5. Device can safely handle +10 dBm RF Input Power provided I is GS 30 limited to 1 mA. I at P drive RF level is bias circuit dependent. GS 1dB See applications section for additional information. 0.5V 20 10 0.4V 0.3V 0 0 1 2 3 4 5 6 7 V (V) DS Figure 1. Typical I-V Curves. (V = 0.1 V per step) GS 6 Product Consistency Distribution Charts 180 150 160 Cpk = 1.64 Cpk = 2.46 Cpk = 2.85 Stdev = 0.19 Stdev = 0.06 Stdev = 0.25 150 120 120 120 90 -3 Std +3 Std +3 Std -3 Std 80 90 60 60 40 30 30 0 0 0 15 16 17 18 19 22 23 24 25 26 0.29 0.49 0.69 0.89 1.09 GAIN (dB) NF (dB) OIP3 (dBm) Figure 2. Capability Plot for Gain 2.7V, Figure 4. Capability Plot for NF 2.7V, Figure 3. Capability Plot for OIP3 2.7V, 10 mA. LSL = 15.5, Nominal = 17.5, 10 mA. LSL = 22.0, Nominal = 24.1 10 mA. Nominal = 0.5, USL = 0.9 USL = 18.5 Note: 6. Distribution data sample size is 398 samples taken from 4 different wafers. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on production test equipment. Circuit losses have been de-embedded from actual measurements. 2 I (mA) DS