Product Information

BXE40T1K2HFSD

Name: BXE40T1K2HFSD
Brand: Bridgelux
SKU: BXE40T1K2HFSD_Bridgelux
Availability: OutOfStock
Rating: 5 (11 reviews)

BXE40T1K2HFSD electronic component of Bridgelux

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See Product Specifications
Datasheet

Transistor: IGBT; 1.2kV; 40A; 278W; TO247-3

Manufacturer: Bridgelux

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 7.6937 ea
Line Total: USD 7.69

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Wed. 22 May to Tue. 28 May MOQ : 1 Multiples : 1 BXE40T1K2HFSD Bridgelux	1 : USD 7.6937 4 : USD 5.0342 9 : USD 4.7628

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Additional Infomation About Product

The BXE40T1K2HFSD is a high-performance insulated-gate bipolar transistor (IGBT) manufactured by Bridgelux. It has a very high voltage rating of 1.2kV and a high current rating of 40A. It also offers an impressive power rating of 278W when operating in a TO247-3 package. This IGBT is suitable for applications such as motor drives, power supplies, and UPS. With its exceptional high voltage and current ratings, this part makes an ideal choice for high-power applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Bridgelux may also be referenced as

BGL
BRIDGELUX
Bridgelux, Inc.

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Manufacturer Bridgelux Bridgelux
Product Category IGBT Transistors IGBT Transistors
Power Dissipation 278 W 278 W
Category IGBT Transistors IGBT Transistors
Mounting THT THT
Collector-Emitter Voltage 1.2 kV 1.2 kV
Collector Current 40 A 40 A
Type Of Transistor IGBT IGBT
Kind Of Package TUBE TUBE
Turn-On Time 110ns 110ns
Case TO247 - 3 TO247 - 3
Gate-Emitter Voltage 20 V 20 V
Pulsed Collector Current 160 A 160 A
Turn-Off Time 342ns 342ns
Features Of Semiconductor Devices integrated anti - parallel diode integrated anti - parallel diode
Gate Charge 239 nC 239 nC