Product Information

B1M160120HC

Name: B1M160120HC
Brand: BASiC Semiconductor
SKU: B1M160120HC_BASiCSemiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

B1M160120HC electronic component of BASiC Semiconductor

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MOSFET TO-247-3L RoHS

Manufacturer: BASiC Semiconductor

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 29.0963 ea
Line Total: USD 29.1

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - Global Stock Ships to you between Fri. 10 May to Wed. 15 May MOQ : 1 Multiples : 1 B1M160120HC BASiC Semiconductor	1 : USD 29.0963 30 : USD 28.2126

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Additional Infomation About Product

The B1M160120HC is a MOSFET with TO-247-3L RoHS package developed by BASiC Semiconductor. This MOSFET has a drain current rating of 16A and a drain-source voltage of 100V. The power dissipation of this MOSFET is 200W. This MOSFET has low on-resistance and an optimized gate charge for high efficiency. The package type of this device is a three-pin TO-247-3L RoHS package. This device meets the RoHS standards which makes it suitable for use in various applications such as motor control, power supply and AC/DC converters. The B1M160120HC is also characterized with fast switching, low power losses, and simple drive and protection circuits.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Basic Semiconductor may also be referenced as

BASiC Semiconductor

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Manufacturer BASiC Semiconductor BASiC Semiconductor
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package TO - 247 - 3L TO - 247 - 3L
Brand Category Basic Semiconductor Basic Semiconductor
Drain Source Voltage Vdss 1.2 kV 1.2 kV
Continuous Drain Current Id 20 A 20 A
Drain Source On Resistance Rdson@Vgs Id 160 mOhms @20V , 10A 160 mOhms @20V , 10A
Power Dissipation Pd 118 W 118 W
Gate Threshold Voltage Vgsth@Id 2.7 V @2.5 mA 2.7 V @2.5 mA
Reverse Transfer Capacitance Crss@Vds 18 pF @1kV 18 pF @1kV
Type N Channel N Channel
Input Capacitance Ciss@Vds 1.1 nF @1kV 1.1 nF @1kV
Total Gate Charge Qg@Vgs 60 nC @20V 60 nC @20V
Operating Temperature - 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)