Product Information

S18SP6FF50Q

S18SP6FF50Q electronic component of Banner

Datasheet
PHOTOELECTRIC SENSOR, 0MM to 50MM, PNP

Manufacturer: Banner
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 192.2045 ea
Line Total: USD 192.2

54 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
16 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

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S18SP6FF50Q
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1 : USD 190.4099

     
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Sensor Output
Sensing Range Max
Supply Voltage Dc Min
Supply Voltage Dc Max
Output Current
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S18 Sensors (DC-Voltage Series) Datasheet Featuring EZ-BEAM technology for reliable sensing without the need for adjustments Completely epoxy-encapsulated to provide superior durability, designed to meet rigorous IP69K standards for use in 1200 psi washdowns Innovative dual-indicator system for simple sensor performance monitoring Advanced diagnostics to warn of marginal sensing conditions or output overload 10 to 30V dc choose SPDT (complementary) NPN or PNP outputs (150 mA max. ea.) Sensing Mode Range LED Output Model - S186E NPN S18SN6R 20 m (66 ft) Infrared 950 nm PNP S18SP6R OPPOSED NPN S18SN6L 2 m (79 inches) Infrared 950 nm PNP S18SP6L RETRO NPN S18SN6LP P 2 m (79 inches) Visible Red 680 nm PNP S18SP6LP 1 POLAR RETRO NPN S18SN6D 100 mm (4 inches) PNP S18SP6D Infrared 880 nm NPN S18SN6DL 300 mm (12 inches) DIFFUSE PNP S18SP6DL NPN S18SN6FF25 25 mm (1 inch) cutoff PNP S18SP6FF25 NPN S18SN6FF50 50 mm (2 inches) cutoff Infrared 880 nm PNP S18SP6FF50 FIXED-FIELD NPN S18SN6FF100 100 mm (4 inches) cutoff PNP S18SP6FF100 To order the 9 m (30 ft) cable model, add suffixW/30 to the cabled model number. For example, S186E W/30. To order the 4-pin Euro-style QD models, add suffix. Models with a QD connector require a mating cable. WARNING: Not To Be Used for Personnel Protection Never use this device as a sensing device for personnel protection. Doing so could lead to serious injury or death. This device does not include the self-checking redundant circuitry necessary to allow its use in personnel safety applications. A sensor failure or malfunction can cause either an energized or de-energized sensor output condition. 1 Use polarized models when shiny objects will be sensed. Original Document 10 March 2014 121522 Rev. B 121522 S18 Sensors (DC-Voltage Series) Fixed-Field Mode Overview S18 Series self-contained fixed-field sensors are small, powerful, infrared diffuse mode sensors with far-limit cutoff (a type of background suppression). Their high excess gain and fixed-field technology allow them to detect objects of low reflectivity, while ignoring background surfaces. The cutoff distance is fixed. Backgrounds and background objects must always be placed beyond the cutoff distance. Fixed-Field Sensing Theory of Operation The S18FF compares the reflections of its emitted light beam (E) Cutoff from an object back to the sensors two differently aimed detectors, Distance R1 and R2. If the near detector (R1) light signal is stronger than the Object B far detector (R2) light signal (see object A, closer than the cutoff Receiver Object or distance), the sensor responds to the object. If the far detector (R2) Elements A Background light signal is stronger than the near detector (R1) light signal (see Lenses Near object B, beyond the cutoff distance), the sensor ignores the object. R1 Detector The cutoff distance for model S18FF sensors is fixed at 25, 50 or 100 Far millimeters (1 , 2 , or 4 ). Objects lying beyond the cutoff distance R2 Detector usually are ignored, even if they are highly reflective. However, it is possible to falsely detect a background object, under certain conditions (see Background Reflectivity and Placement). In the drawings and discussion on these pages, the letters E, R1, and R2 identify how the sensors three optical elements (Emitter E, E Emitter Near Detector R1, and Far Detector R2) line up across the face of the sensor. The location of these elements defines the sensing axis Sensing (see Figure 2 on page 2). The sensing axis becomes important in Range certain situations, such as those illustrated in Figure 5 on page 3 and Figure 6 on page 3. Object is sensed if amount of light at R1 is greater than the amount of light at R2 Figure 1. Fixed-field concept Sensor Setup Sensing Reliability As a general rule, the most reliable sensing of an object approaching from the side occurs when the line of approach is parallel to the sensing axis. For highest sensitivity, position the target object for sensing at or near the point of maximum excess gain. The excess gain curves for these products are shown on page 5. Maximum excess gain for the 25 mm models occurs at a lens-to-object distance of about 7 mm for 50 mm models, at about 10 mm and for the 100 mm models, at about 20 mm. Sensing at or near this distance will make maximum use of each sensors available sensing power. The background must be placed beyond the cutoff distance. (Note that the reflectivity of the background surface also may affect the cutoff distance.) Sensing Following these two guidelines will improve sensing reliability. Axis Figure 2. Fixed-field sensing axis Background Reflectivity and Placement Avoid mirror-like backgrounds that produce specular reflections. False sensor response will occur if a background surface reflects the sensors light more strongly to the near detector, or sensing detector (R1), than to the far detector, or cutoff detector (R2). The result is a false ON condition (see Figure 3 on page 3). To cure this problem, use a diffusely 2 www.bannerengineering.com - tel: 763-544-3164 P/N 121522 Rev. B E R2 R1

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:

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