Advanced Power Electronics Corp. AP9930GM-HF-3 Quad Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement P2G N2D/P2D N-CH BV 30V Low On-resistance DSS P1S/P2S P1G R 33m Full Bridge Applications DS(ON) N2G I 5.5A RoHS-compliant, halogen-free N1S/N2S D N1D/P1D P-CH BV -30V N1G SO-8 DSS R 55m DS(ON) I -4.1A Description D P1S P2S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. P1G P2G The AP9930GM-HF-3 is in a standard SO-8 package, which is widely used for commercial and industrial surface-mount applications, and is P2N2D P1N1D well suited for applications such as DC and servo motor drives. N2G N1G N2S N1S Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel V Drain-Source Voltage 30 -30 V DS V Gate-Source Voltage 20 20 V GS 3 I at T =25C Continuous Drain Current 5.5 -4.1 A D A 3 I at T =70C Continuous Drain Current 4.4 -3.3 A D A 1 I Pulsed Drain Current 20 -20 A DM P at T =25C Total Power Dissipation 1.38 W D A Linear Derating Factor 0.011 W/C T Storage Temperature Range -55 to 150 C STG T Operating Junction Temperature Range -55 to 150 C J Thermal Data Symbol Parameter Value Unit 3 Rthj-a Maximum Thermal Resistance, Junction-ambient 90 C/W Ordering Information AP9930GM-HF-3TR : in RoHS-compliant, halogen-free SO-8, shipped on tape and reel (3000 pcs/reel) 2010 Advanced Power Electronics Corp. USA 200805154-3 1/8 www.a-powerusa.comAdvanced Power Electronics Corp. AP9930GM-HF-3 N-channel Electrical Specifications at T =25C (unless otherwise specified) j Symbol Parameter Test Conditions Min. Typ. Max. Units BV Drain-Source Breakdown Voltage V =0V, I =250uA 30 - - V DSS GS D 2 R Static Drain-Source On-Resistance V =10V, I =5A - - 33 m DS(ON) GS D V =4.5V, I =3A - - 60 m GS D V Gate Threshold Voltage V =V , I =250uA 1 - 3 V GS(th) DS GS D g Forward Transconductance V =10V, I =5A - 5.2 - S fs DS D I Drain-Source Leakage Current uA DSS V =30V, V =0V - - 1 DS GS o Drain-Source Leakage Current (T =70 C) uA j V =24V, V =0V - - 25 DS GS I nA GSS Gate-Source Leakage V =20V - - 100 GS 2 Q Total Gate Charge I =5A - 7 10 nC g D Q Gate-Source Charge V =15V - 2 - nC gs DS Q Gate-Drain Mille) Charge V =4.5V - 4 - nC gd GS 2 t Turn-on Delay Time V =15V - 7 - ns d(on) DS t Rise Time I =1A - 10 - ns r D t Turn-off Delay Time R =6, V =10V - 18 - ns d(off) G GS t Fall Time R =15 - 8 - ns f D C Input Capacitance V =0V - 600 960 pF iss GS pF C Output Capacitance V =25V - 229.8 - oss DS pF C Reverse Transfer Capacitance f=1.0MHz - 94 - rss Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units 2 V Forward On Voltage I =1.2A, V =0V - - 1.2 V SD S GS 2 t Reverse Recovery Time I =1.7A, V =0V - 21 - ns rr S GS Q Reverse Recovery Charge dI/dt=100A/s - 16 - nC rr Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse width <300us, duty cycle < 2%. 2 copper pad of FR4 board, t <10sec 186C/W when mounted on min. copper pad. 3.Surface mounted on 1 in THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2010 Advanced Power Electronics Corp. USA 2/8 www.a-powerusa.com