MAX17106 19-4685 Rev 0 7/09 Step-Up Regulator and High-Voltage Step-Up with Temperature Compensation General Description Features S 2.4V to 3.6V VDDS Input Voltage Range The MAX17106 is optimized for thin-film transistor (TFT) liquid-crystal display (LCD) applications. The device S 0.2mA VDDS Quiescent Current includes a high-performance 18V step-up regulator with S 5mA VIN Quiescent Current (Switching) integrated switch for the source-driver supply, a 38V S 3mA AVDD Quiescent Current (for Op Amps) step-up regulator with temperature compensation for S 1.2MHz Current-Mode Step-Up Regulator the TFT gate-on supply (VON), a 300mA low-dropout S VON Temperature-Compensated Step-Up 2.5V internal linear regulator for the logic supply, three Regulator high-speed operational amplifiers, a digitally adjustable S Internal 300mA Low-Dropout (LDO) Linear VCOM calibration device with nonvolatile memory, two Regulator electrically erasable programmable read-only memory S Rail-to-Rail High-Speed Operational Amplifier (EEPROM) blocks (2Kb extended display identification data (EDID) memory and 16Kb timing controller memory) S High-Voltage Drivers with Scan Logic 2 with separate I C interfaces, and a high-voltage level- S Programmable VCOM Calibrator shifting scan driver. S 2Kb EEPROM EDID Memory The main DC-DC step-up converter provides the S 16Kb EEPROM Timing Controller Memory regulated supply voltage for the panel source driver S Thermal-Overload Protection ICs. The converter is a 1.2MHz current-mode regulator S 56-Pin, 7mm x 7mm Thin QFN Package with an integrated 20V n-channel power MOSFET. The high switching frequency allows the use of ultra-small Ordering Information inductors and ceramic capacitors. The current-mode PART TEMP RANGE PIN-PACKAGE control architecture provides fast transient response to pulsed loads. The step-up regulator features digital soft- MAX17106ETN+ -40NC to +85NC 56 Thin QFN start and cycle-by-cycle current limit. +Denotes a lead(Pb)-free/RoHS-compliant package. The VON step-up regulator is a simple minimum off-time, *EP = Exposed pad. pulse-skipping architecture with a variable peak-current Pin Configuration threshold. The output voltage is adjusted according to the voltage on the NTC pins (temperature reading) and TOP VIEW two voltage levels set by current sources on the VHI and VLO pins. See the VON Positive Gate-Driver Step-Up Regulator section for more information. 42 41 40 39 38 37 36 35 34 33 32 31 30 29 The MAX17106 is available in a 7mm x 7mm, 56-pin, SW 43 28 CGND lead-free TQFN package with exposed pad and operates SW 27 POS1 44 over the -40NC to +85NC temperature range. PGND 45 26 NEG1 25 PGND 46 VCOM1 Applications COMP 47 24 POS2 TFT LCD Notebook Panels FB 48 23 NEG2 RHVS 22 VCOM2 49 MAX17106 HVS 50 21 POS3 NTC1 51 20 NEG3 NTC2 52 19 VCOM3 VHI 53 18 AVDD 17 VLO 54 VL FBP 55 16 VDDS GNDP 56 15 DISH 1 2 3 4 5 6 7 8 9 10 11 12 13 14 THIN QFN 8mm x 8mm Simplified Operating Circuit appears at end of data sheet. Maxim Integrated Products 1 For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxims website at www.maxim-ic.com. EVALUATION KIT AVAILABLE SWP SHDN VON VIN DISVSS LGND VOFF LOUT CKVB VDDT CKVBCS SCLT CKVCS SDAT CKV WPN STVP SCL SGND SDA STV GND CPV VDDE OECON RSET OE OUTStep-Up Regulator and High-Voltage Step-Up with Temperature Compensation ABSOLUTE MAXIMUM RATINGS VIN, HVS, SHDN to LGND ....................................-0.3V to +7.5V VON to SGND ........................................................-0.3V to +40V VOFF to SGND ......................................................-20V to +0.3V LOUT to LGND ......................................... -0.3V to (V + 0.3V) VIN CKV, CKVB, STVP, CKVCS, CKVBCS, VL to GND ...............................................................-0.3V to +3V VDDE, VDDT to GND .-0.3V to +4V DISVSS to SGND .................. (V - 0.3V) to (V + 0.3V) VOFF VON RSET to LGND .......................................... -0.3V to (OUT + 0.3V) PGND, CGND, SGND, GND to LGND ..................-0.3V to +0.3V SDAT, SCLT, SCL, SDA, WPN, RSET to GND ......-0.3V to +4.0V SW, PGND RMS Current Rating (total) ................................ 2.4A OECON, CPV, OE, STV, VDDS to SGND .............-0.3V to +4.0V V V V RMS Current ................80mA COM1, COM2, AVDD, CGND V RMS Current ...........................................................5mA COMP, FB, FBP, RHVS to LGND ..............-0.3V to (V + 0.3V) COM3 VIN SWP, GNDP RMS Current Rating .........................................0.8A NTC1, NTC2, VHI, VLO-0.3V to (V + 0.3V VL POS , NEG RMS Current Rating ........................................5mA DISH to SGND ............................................. -6V to (V + 0.3V) VIN Continuous Power Dissipation (T = +70NC) A AVDD to CGND .....................................................-0.3V to +20V 56-Pin, 7mm x 7mm Thin QFN AVDD to LGND ........................................-0.3V to (V + 0.3V) VON (derate 40mW/NC above +70NC) ...............................2400mW SW to PGND ..........................................................-0.3V to +20V Operating Temperature Range .......................... -40NC to +85NC SWP to PGND ........................................................-0.3V to +40V Junction Temperature .....................................................+150NC OUT, VCOM1, VCOM2, VCOM3, NEG1, NEG2, NEG3, Storage Temperature Range ............................ -65NC to +150NC POS1, POS2, POS3 to CGND ............-0.3V to (V + 0.3V) AVDD Lead Temperature (soldering, 10s) .................................+300NC POS1, POS2, POS3 to NEG1, NEG2, NEG3 ..............-6V to +6V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS (V = = V = V = V = +3V, circuit of Figure 2, V = 8V, V = 23V, V = -12V, V = V = 4V, VIN VVDDE VDDT VDDS SHDN AVDD VON VOFF POS NEG V = V = V = V = 0V, T = 0NC to +85NC, unless otherwise noted. Typical values are at T = +25NC.) CPV STV OECON OE A A PARAMETER CONDITIONS MIN TYP MAX UNITS VIN Input Voltage Range (Note 1) 2.4 6.0 V V rising typical hysteresis 100mV SW remains off VIN VIN Undervoltage Lockout 2.20 2.35 V below this level VDDS, VDDE, VDDT 2.4 3.6 V Input Voltage Range VDDS Quiescent Current V = 3V 180 320 FA VDDS VDDE Quiescent Current V = 3V (Note 2) 20 40 FA VDDE VDDT Quiescent Current V = 3V 10 20 FA VDDT V rising typical hysteresis 100mV communications VDDE VDDE Undervoltage Lockout 1.4 2.25 V with SCL/SDA remain off below this level V rising typical hysteresis 100mV communications VDDT VDDT Undervoltage Lockout 1.4 2.25 V with SCLT/SDAT remain off below this level FB, FBP, LOUT Undervoltage 50 ms Fault-Timer Duration Duration to Restart After Fault 160 ms Number of Restart Attempts 3 Times Before Shutdown Thermal Shutdown Rising edge, hysteresis = 15NC 160 C MEMORY BLOCK LINEAR REGULATOR (VL) VL Output Voltage V or V = 3V 2.3 2.5 2.7 V VIN VDDE VL Undervoltage Lockout V rising, typical hysteresis =100mV 2.1 V VL VL Dropout Voltage 0.05 0.1 V I 10mA VL = VL Maximum Output Current 10 mA 2 MAX17106