Product Information

MAX16915AUB+

MAX16915AUB+ electronic component of Analog Devices

Datasheet
Supervisory Circuits Ideal Diode, Reverse-Battery, and Overvoltage Protection Switch/Limiter Controllers with External MOSFETs

Manufacturer: Analog Devices
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Price (USD)

1: USD 4.4139 ea
Line Total: USD 4.41

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
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MAX16915AUB+
Analog Devices

1 : USD 4.4139
10 : USD 3.1248
25 : USD 2.9484
50 : USD 2.9358
100 : USD 2.5452
250 : USD 2.3261
500 : USD 2.0839
1000 : USD 1.8779
2500 : USD 1.8173

     
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Manual Reset
Watchdog
Watchdog Timers
Battery Backup Switching
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MAX16914/MAX16915 Ideal Diode, Reverse-Battery, and Overvoltage Protection Switch/Limiter Controllers with External MOSFETs General Description Benefits and Features The MAX16914/MAX16915 low-quiescent-current over- Architecture Replaces Protection Diodes Reducing the Forward Voltage, Allowing Operation During voltage and reverse-battery protection controllers are Cold-Crank Conditions designed for automotive and industrial systems that must tolerate high-voltage transient and fault conditions. Transient Voltage Protection Up to +44V and -75V These conditions include load dumps, voltage dips, and Low-Voltage Drop when Used with Properly Sized reversed input voltages. The controllers monitor the input External pFETs voltage on the supply line and control two external pFETs 4.5V to 19V Input-Voltage Operation to isolate the load from the fault condition. The external Ideal Diode Reverse-Battery Protection Supports pFETs are turned on when the input supply exceeds 4.5V Down to -75V to Protect System During Negative- and stay on up to the programmed overvoltage threshold. Voltage Transients During high-voltage fault conditions, the controllers regu- Back-Charge Prevention Avoids Discharging late the output voltage to the set upper threshold voltage Downstream Tank Capacitance (MAX16915), or switch to high resistance (MAX16914) for the duration of the overvoltage transient to prevent dam- Overvoltage Protection Enables System to Survive age to the downstream circuitry. The overvoltage event is Up to a +44V Load Dump indicated through an active-low, open-drain output, OV. Overvoltage Indicator The reverse-battery pFET behaves as an ideal diode, Thermal-Overload Protection minimizing the voltage drop when forward biased. Under Low Operating Current Meets Stringent Module reverse bias conditions, the pFET is turned off, prevent- Specifications While Maintaining System Protection ing a downstream tank capacitor from being discharged 29A Low Operating Current into the source. 6A Low Shutdown Current Shutdown control turns off the IC completely, disconnect- ing the input from the output and disconnecting TERM Ordering Information appears at end of data sheet. from its external resistor-divider to reduce the quiescent current to a minimum. Both devices are available in a 10-pin MAX pack- Typical Operating Circuit age and operate over the automotive -40C to +125C temperature range. P1 P2 V V BATT OUT Applications Industrial Pin Configuration V GATE2 CC MAX16914 MAX16915 TOP VIEW GATE1 SENSE OUT + OV V 1 10 GATE2 CC SENSE IN OV GATE1 2 9 SENSE OUT TERM MAX16914 ON SENSE IN 3 MAX16915 8 TERM OFF SHDN R1 SHDN 4 7 SET SET GND OV 5 6 GND R2 MAX is a registered trademark of Maxim Integrated Products, Inc. 19-4964 Rev 3 2/15MAX16914/MAX16915 Ideal Diode, Reverse-Battery, and Overvoltage Protection Switch/Limiter Controllers with External MOSFETs Absolute Maximum Ratings V , SENSE OUT, TERM, SHDN, OV to GND for GATE1, GATE2 to GND ........................... -0.3V to (V + 0.3V) CC CC P 400ms .............................................................-0.3V to +44V SET to GND .............................................................-0.3V to +8V V , SENSE OUT, TERM, SHDN, OV to GND Continuous Power Dissipation (T = +70NC) CC A for P 90s .............................................................-0.3V to +28V 10-Pin FMAX (derate 8.8mW/NC above T = +70NC) A V , SENSE OUT, TERM, SHDN, OV to GND .....-0.3V to +20V (Note 1) .......................................................................707mW CC SENSE IN to GND for P 2ms ..................................-75V to +44V Operating Temperature Range ........................ -40NC to +125NC SENSE IN to GND for P 90s ..................................-18V to +44V Junction Temperature .....................................................+150NC SENSE IN to GND .................................................-0.3V to +20V Storage Temperature Range ............................ -65NC to +150NC GATE1, GATE2 to V ..........................................-16V to +0.3V Lead Temperature (soldering, 10s) ................................+300NC CC Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional opera- tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Electrical Characteristics (V = 14V, C = 32nF, C = 32nF, SHDN = high, T = -40NC to +125NC, unless otherwise noted. Typical values CC GATE1 GATE2 A are at T = +25NC.) (Note 2) A PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Voltage Range V (Note 3) 4.5 19 V CC T = +25NC 6.0 12 A T = +85NC (Note Shutdown Supply Current A SHDN = low, 6.1 12 3) (I + I + I + I FA SENSE IN SENSE OUT OV SHDN V = 0V, SENSE OUT I + I ) SHDN VCC V = 0V TERM T = +125NC A 6.2 12 (Note 3) T = +25NC 29 53 A T = +85NC (Note Quiescent Supply Current A 30 55 3) (I + I + I + I FA SENSE IN SENSE OUT OV Q SHDN = high I + I ) SHDN VCC T = +125NC A 31 57 (Note 3) V Undervoltage Lockout V 4.06 4.35 V CC UVLO V rising, V = 1V , SHDN = high CC SET V Undervoltage-Lockout CC 8 % Hysteresis SET Threshold Voltage V V rising -3% +1.20 +3% V SETTH SET SET Threshold Voltage V 4 % SETHY Hysteresis SET Input Current I V = 1V 0.02 0.2 FA SET SET V 0.4 V SHDN Low Threshold SHDNL V 1.4 V SHDN High Threshold SHDNH I 0.5 1.0 FA SHDN Pulldown Current SHDN V = 14V, internally pulled to GND SHDN V to GATE Output Low CC V V = 14V 6.25 7.5 8.5 V GVCC1 CC Voltage V to GATE Clamp Voltage V V = 42V 14 V CC GVCC2 CC Maxim Integrated 2 www.maximintegrated.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
AD4
ANALOG DEVICES
Analog Devices Hittite
ANALOG DEVICES (LINEAR TECHNOLOGY)
ANALOG DEVICES (MAXIM INTEGRATED)
ANALOG DEVICES (TRINAMIC)
Analog Devices / Hittite
Analog Devices / Linear Technology
Analog Devices Inc
Analog Devices Inc.
Analog Devices, Inc.
DA4
Dallas
DALLAS / MAXIM
Dallas Semiconductor (VA)
LINEAR
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Linear Technology (part of ADI)
LT
LT4
MAXIM
Maxim Integrated
MAXIM INTEGRATED / ANALOG DEVICES
Maxim Integrated Products
MAXIM-DALLAS
MX4
Technology
Trinamic
TRINAMIC / ANALOG DEVICES
Trinamic Motion Control
Trinamic Motion Control GmbH

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