AOT25S65/AOB25S65/AOTF25S65 TM 650V 25A MOS Power Transistor General Description Product Summary V T 750V The AOT25S65 & AOB25S65 & AOTF25S65 have been DS j,max TM fabricated using the advanced MOS high voltage I 104A DM process that is designed to deliver high levels of R 0.19 DS(ON),max performance and robustness in switching applications. Q 26.4nC g,typ By providing low R , Q and E along with DS(on) g OSS E 400V 5.8C oss guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% R Tested g For Halogen Free add suffix to part number: AOT25S65L & AOB25S65 & AOTF25S65L Top View TO-263 D TO-220 TO-220F 2 D PAK D S D S G S G D G G S AOT25S65 AOTF25S65 AOB25S65 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol AOT25S65/AOB25S65 AOTF25S65 AOTF25S65L Units Drain-Source Voltage V 650 V DS Gate-Source Voltage V 30 V GS T =25C 25 25* 25* C Continuous Drain I D Current T =100C 16 16* 16* A C C Pulsed Drain Current I 104 DM C Avalanche Current I 7 A AR C Repetitive avalanche energy E 96 mJ AR G Single pulsed avalanche energy E 750 mJ AS T =25C 357 50 40 W C P B D o o Power Dissipation Derate above 25 C 2.9 0.4 0.3 W/ C MOSFET dv/dt ruggedness 100 dv/dt V/ns H Peak diode recovery dv/dt 20 Junction and Storage Temperature Range T , T -55 to 150 C J STG Maximum lead temperature for soldering J purpose, 1/8 from case for 5 seconds T 300 C L Thermal Characteristics Parameter Symbol AOT25S65/AOB25S65 AOTF25S65 AOTF25S65L Units A,D R Maximum Junction-to-Ambient 65 65 65 C/W JA A R Maximum Case-to-sink CS 0.5 -- -- C/W Maximum Junction-to-Case R 0.35 2.5 3.1 C/W JC * Drain current limited by maximum junction temperature. Rev1: Mar 2012 www.aosmd.com Page 1 of 7 AOT25S65/AOB25S65/AOTF25S65 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V, T =25C 650 - - D GS J BV Drain-Source Breakdown Voltage DSS I =250A, V =0V, T =150C 700 750 - V D GS J V =650V, V =0V - - 1 DS GS I Zero Gate Voltage Drain Current A DSS V =520V, T =150C - 10 - DS J I Gate-Body leakage current V =0V, V =30V - - 100 n GSS DS GS V V =5V,I =250A Gate Threshold Voltage 2.6 3.3 4 V GS(th) DS D V =10V, I =12.5A, T =25C - 0.165 0.19 GS D J R Static Drain-Source On-Resistance DS(ON) V =10V, I =12.5A, T =150C - 0.47 0.53 GS D J V Diode Forward Voltage I =12.5A,V =0V, T =25C - 0.84 - V SD S GS J I Maximum Body-Diode Continuous Current - - 25 A S I Maximum Body-Diode Pulsed Current - - 104 A SM DYNAMIC PARAMETERS C Input Capacitance - 1278 - pF iss V =0V, V =100V, f=1MHz GS DS C Output Capacitance - 87 - pF oss Effective output capacitance, energy C - 64.5 - pF o(er) H related V =0V, V =0 to 480V, f=1MHz GS DS Effective output capacitance, time C - 236.7 - pF o(tr) I related V =0V, V =100V, f=1MHz C Reverse Transfer Capacitance - 1.4 - pF GS DS rss V =0V, V =0V, f=1MHz R Gate resistance - 4.9 - g GS DS SWITCHING PARAMETERS Q Total Gate Charge - 26.4 - nC g Q Gate Source Charge V =10V, V =480V, I =12.5A - 6.2 - nC GS DS D gs Q Gate Drain Charge - 9.5 - nC gd t Turn-On DelayTime - 29 - ns D(on) t Turn-On Rise Time V =10V, V =400V, I =12.5A, - 30 - ns GS DS D r R =25 t Turn-Off DelayTime G - 112 - ns D(off) t Turn-Off Fall Time - 34 - ns f t I =12.5A,dI/dt=100A/s,V =400V - 408 rr Body Diode Reverse Recovery Time F DS - ns I I =12.5A,dI/dt=100A/s,V =400V Peak Reverse Recovery Current - 33 rm F DS - A Q I =12.5A,dI/dt=100A/s,V =400V - 8.27 rr Body Diode Reverse Recovery Charge F DS - C A. The value of R is measured with the device in a still air environment with T =25C. JA A B. The power dissipation P is based on T =150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation D J(MAX) limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150C, Ratings are based on low frequency and duty cycles to keep initial T J(MAX) J =25C. D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse ratin g. J(MAX) G. L=60mH, I =5A, V =150V, Starting T =25C AS DD J H. C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS (BR)DSS. I. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V o(tr) oss DS (BR)DSS. J. Wavesoldering only allowed at leads. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev1: Mar 2012 www.aosmd.com Page 2 of 7