AON7528 30V N-Channel AlphaMOS General Description Product Summary V Latest Trench Power AlphaMOS (MOS LV) technology DS 30V Very Low RDS(on) at 4.5V GS I (at V =10V) 50A D GS Low Gate Charge R (at V =10V) < 2m DS(ON) GS ESD protection R (at V = 4.5V) < 3.4m DS(ON) GS RoHS and Halogen-Free Compliant Typical ESD protection HBM Class 2 Application 100% UIS Tested DC/DC Converters 100% R Tested g DFN 3.3x3.3 EP D Top View Bottom View Top View 1 8 S D 2 7 D S 3 6 G S D 4 5 G D S Pin 1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 3300 VV DDSS Gate-Source Voltage V 20 V GS T =25C Continuous Drain 50 C I D G Current T =100C 39 A C C Pulsed Drain Current I 200 DM T =25C 45 A Continuous Drain I A DSM Current T =70C 36 A C Avalanche Current I 50 A AS C Avalanche energy L=0.05mH E 63 mJ AS V Spike 100ns V 36 V DS SPIKE T =25C 83 C P W D B Power Dissipation T =100C 33 C T =25C 6.2 A P W DSM A Power Dissipation T =70C 4 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 16 20 C/W R A D JA Steady-State Maximum Junction-to-Ambient 45 55 C/W Maximum Junction-to-Case Steady-State R 1.1 1.5 C/W JC Rev0: May 2012 www.aosmd.com Page 1 of 6 AON7528 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V D GS DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V = 20V I Gate-Body leakage current 10 A GSS DS GS V Gate Threshold Voltage V =V I =250A 1.2 1.8 2.2 V GS(th) DS GS, D V =10V, I =20A 1.6 2 GS D m R Static Drain-Source On-Resistance T =125C 2.3 2.9 DS(ON) J V =4.5V, I =20A 2.6 3.4 m GS D V =5V, I =20A g Forward Transconductance 81 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V SD S GS G I Maximum Body-Diode Continuous Current 50 A S DYNAMIC PARAMETERS C Input Capacitance 2895 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 1439 pF oss GS DS C Reverse Transfer Capacitance 149 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.5 1.0 1.5 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 45.4 60 nC g Q (4.5V) Total Gate Charge 21.3 29 nC g V =10V, V =15V, I =20A GS DS D Q Gate Source Charge 8.0 nC gs Q Gate Drain Charge 9.0 nC gd t Turn-On DelayTime 8.5 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =0.75, 5.0 ns r GS DS L RR ==33 tt TTuurrnn--OOffff DDeellaayyTTiimmee 3311..00 nnss D(off) GEN t Turn-Off Fall Time 7.5 ns f t I =20A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 22.3 ns Q I =20A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 54 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R t 10s and the maximum allowed junction temperature of 150 C. The value in any given application DSM JA depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: May 2012 www.aosmd.com Page 2 of 6