AON1611 20V P-Channel MOSFET General Description Product Summary V The AON1611 combines advanced trench MOSFET DS -20V technology with a low resistance package to provide I (at V =-4.5V) -4A D GS extremely low R . This device is ideal for load switch DS(ON) R (at V =-4.5V) < 58m DS(ON) GS and battery protection applications. R (at V =-2.5V) < 76m DS(ON) GS R (at V =-1.8V) < 98m DS(ON) GS R (at V =-1.5V) < 120m DS(ON) GS Typical ESD protection HBM Class 2 DFN 1.6x1.6A D Top View Bottom View Pin 1 D S S G G S Pin 1 Absolute Maximum Ratings T =25C unless otherwise noted A PPaarraammeetteerr SSyymmbbooll MMaaxxiimmuumm UUnniittss Drain-Source Voltage V -20 V DS Gate-Source Voltage V 8 V GS T =25C -4 Continuous Drain A I D G Current T =70C -3 A A C Pulsed Drain Current I -16 DM T =25C 1.8 A P W D A T =70C Power Dissipation 1.15 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 56 70 C/W R JA A D Steady-State Maximum Junction-to-Ambient 88 110 C/W Rev 0 : June 2012 www.aosmd.com Page 1 of 5 AON1611 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -20 V D GS DSS V =-20V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J V =0V, V =8V I Gate-Body leakage current 10 A GSS DS GS V V =V , I =-250A Gate Threshold Voltage -0.3 -0.6 -0.9 V GS(th) DS GS D I On state drain current V =-10V, V =-5V -16 A GS DS D(ON) V =-4.5V, I =-4A 46 58 GS D m T =125C 64.5 80 J R Static Drain-Source On-Resistance V =-2.5V, I =-3A 58 76 m DS(ON) GS D V =-1.8V, I =-2A 74 98 m GS D V =-1.5V, I =-1A 88 120 m GS D g Forward Transconductance V =-5V, I =-4A 15 S FS DS D V Diode Forward Voltage I =-1A,V =0V -0.66 -1 V SD S GS I Maximum Body-Diode Continuous Current -2.5 A S DYNAMIC PARAMETERS C Input Capacitance 550 pF iss C Output Capacitance V =0V, V =-10V, f=1MHz 93 pF GS DS oss C Reverse Transfer Capacitance 64 pF rss V =0V, V =0V, f=1MHz R Gate resistance 12 g GS DS SWITCHING PARAMETERS Q (4.5V) Total Gate Charge 7 10 nC g Q Gate Source Charge V =-4.5V, V =-10V, I =-4A 1 nC GS DS D gs Q Gate Drain Charge 1.8 nC gd tt TTuurrnn--OOnn DDeellaayyTTiimmee 1155 nnss D(on) t Turn-On Rise Time V =-4.5V, V =-10V, R =2.5, 33 ns r GS DS L R =3 t Turn-Off DelayTime 50 ns GEN D(off) t Turn-Off Fall Time 43 ns f t I =-4A, dI/dt=100A/s rr Body Diode Reverse Recovery Time F 16 ns Q I =-4A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 6.5 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R t 10s value and the maximum allowed junction temperature of 150 C. The value in any given DSM JA application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : June 2012 www.aosmd.com Page 2 of 5