AO4821
12V Dual P-Channel MOSFET
General Description Product Summary
V
The AO4821 uses advanced trench technology to provide -12V
DS
excellent R , low gate charge and operation with gate
DS(ON) I (at V =-4.5V) -9A
D GS
voltages as low as 1.8V. This device is suitable for use as
R (at V =-4.5V) < 19m
DS(ON) GS
a load switch.
R (at V =-2.5V) < 24m
DS(ON) GS
R (at V =-1.8V) < 30m
DS(ON) GS
100% UIS Tested
100% Rg Tested
SOIC-8
D1
D2
Top View Bottom View 1
Top View
S2 D2 Rg
1 8 Rg
G2 2 D2
7
G1
G2
S1 3 6 D1
G1 4 5 D1
S1
S2
Pin1
Absolute Maximum Ratings T =25C unless otherwise noted
A
Parameter Symbol Maximum Units
Drain-Source Voltage V -12 V
DS
Gate-Source Voltage V 8 V
GS
T =25C
-9
A
Continuous Drain
I
D
Current T =70C -7 A
A
C
Pulsed Drain Current I -60
DM
T =25C 2
A
P
W
D
B
T =70C
Power Dissipation 1.28
A
Junction and Storage Temperature Range T , T -55 to 150 C
J STG
Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t 10s
48 62.5 C/W
R
A D JA
Maximum Junction-to-Ambient Steady-State
74 90 C/W
Maximum Junction-to-Lead Steady-State R 32 40 C/W
JL
Rev 4: Nov 2010 www.aosmd.com Page 1 of 5 AO4821
Electrical Characteristics (T =25C unless otherwise noted)
J
Symbol Parameter Conditions Min Typ Max Units
STATIC PARAMETERS
BV Drain-Source Breakdown Voltage I =-250A, V =0V -12 V
DSS D GS
V =-12V, V =0V -1
DS GS
I
Zero Gate Voltage Drain Current A
DSS
T =55C -5
J
I Gate-Body leakage current V =0V, V = 8V 10 A
DS GS
GSS
V Gate Threshold Voltage V =V I =-250A -0.35 -0.53 -0.85 V
GS(th) DS GS D
I On state drain current V =-4.5V, V =-5V -60 A
D(ON) GS DS
V =-4.5V, I =-9A 16 19
GS D
m
T =125C 22 27
J
R Static Drain-Source On-Resistance
DS(ON)
V =-2.5V, I =-8A 19 24 m
GS D
V =-1.8V, I =-6A 23 30 m
GS D
g Forward Transconductance V =-5V, I =-9A 45 S
FS DS D
V Diode Forward Voltage I =-1A,V =0V -0.56 -1 V
SD S GS
I Maximum Body-Diode Continuous Current -3 A
S
DYNAMIC PARAMETERS
C Input Capacitance 1390 1740 2100 pF
iss
C Output Capacitance V =0V, V =-6V, f=1MHz 230 334 435 pF
GS DS
oss
C Reverse Transfer Capacitance 120 200 280 pF
rss
V =0V, V =0V, f=1MHz
R Gate resistance 0.9 1.3 1.7 k
g GS DS
SWITCHING PARAMETERS
Q (4.5V) Total Gate Charge 15 19 23 nC
g
Q Gate Source Charge V =-4.5V, V =-6V, I =-9A 3.6 4.5 5.4 nC
GS DS D
gs
Q Gate Drain Charge 3 5.3 7.4 nC
gd
t Turn-On DelayTime 240 ns
D(on)
t Turn-On Rise Time V =-4.5V, V =-6V, R =0.67, 580 ns
r GS DS L
R =3
t Turn-Off DelayTime 7 s
GEN
D(off)
t Turn-Off Fall Time 4.2 s
f
t I =-9A, dI/dt=500A/s
18
rr Body Diode Reverse Recovery Time F 22 26 ns
Q I =-9A, dI/dt=500A/s
14 nC
rr Body Diode Reverse Recovery Charge F 17 20
2
A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The
JA A
value in any given application depends on the user's specific board design.
B. The power dissipation P is based on T =150C, using 10s junction-to-ambient thermal resistance.
D J(MAX)
C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep
J(MAX)
initialT =25C.
J
D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient.
JA JL
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
2
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse ratin g.
J(MAX)
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 4: Nov 2010 www.aosmd.com Page 2 of 5