MT41K512M16HA-107 IT:A

8Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K2G4 256 Meg x 4 x 8 banks MT41K1G8 128 Meg x 8 x 8 banks MT41K512M16 64 Meg x 16 x 8 banks T of 95C C Description 64ms, 8192-cycle refresh up to 85C DDR3L (1.35V) SDRAM is a low voltage version of the 32ms, 8192-cycle refresh at >85C to 95C DDR3 (1.5V) SDRAM. Refer to a DDR3 (1.5V) SDRAM Self refresh temperature (SRT) data sheet specifications when running in 1.5V com- Automatic self refresh (ASR) patible mode. Write leveling Multipurpose register Features Output driver calibration V = V = 1.35V (1.2831.45V) DD DDQ Backward compatible to V = V = 1.5V 0.075V DD DDQ Options Marking Supports DDR3L devices to be backward com- Configuration patible in 1.5V applications 2 Gig x 4 2G4 Differential bidirectional data strobe 1 Gig x 8 1G8 8n-bit prefetch architecture 512 Meg x 16 512M16 Differential clock inputs (CK, CK ) FBGA package (Pb-free) x4, x8 8 internal banks 78-ball (9mm x 13.2mm) SN Nominal and dynamic on-die termination (ODT) FBGA package (Pb-free) x16 for data, strobe, and mask signals 96-ball (9mm x 14mm) HA Programmable CAS (READ) latency (CL) Timing cycle time Programmable posted CAS additive latency (AL) 1.25ns CL = 11 (DDR3-1600) -125 Programmable CAS (WRITE) latency (CWL) 1.07ns CL = 13 (DDR3-1866) -107 Fixed burst length (BL) of 8 and burst chop (BC) of 4 Operating temperature (via the mode register set MRS ) Commercial (0C T +95C) None C Selectable BC4 or BL8 on-the-fly (OTF) Industrial (40C T +95C) IT C Self refresh mode Revision :A Table 1: Key Timing Parameters t t t t Speed Grade Data Rate (MT/s) Target RCD- RP-CL RCD (ns) RP (ns) CL (ns) 1 -107 1866 13-13-13 13.91 13.91 13.91 -125 1600 11-11-11 13.75 13.75 13.75 1. Backward compatible to 1600, CL = 11 (-125). Note: 09005aef8591dc1f Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 8Gb DDR3L.pdf - Rev. E 9/18 EN 2015 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.8Gb: x4, x8, x16 DDR3L SDRAM Description Table 2: Addressing Parameter 2 Gig x 4 1 Gig x 8 512 Meg x 16 Configuration 256 Meg x 4 x 8 banks 128 Meg x 8 x 8 banks 64 Meg x 16 x 8 banks Refresh count 8K 8K 8K Row address 64K (A 15:0 ) 64K (A 15:0 ) 64K (A 15:0 ) Bank address 8 (BA 2:0 ) 8 (BA 2:0 ) 8 (BA 2:0 ) Column address 4K (A 13,11, 9:0 ) 2K (A 11,9:0 ) 1K (A 9:0 ) Page size 2KB 2KB 2KB Figure 1: DDR3L Part Numbers Example Part Number: MT41K1G8SN-125:A - : Configuration Package Speed Revision MT41K :A Revision Temperature Configuration Commercial 2 Gig x 4 2G4 None 1 Gig x 8 1G8 Industrial temperature IT 512 Meg x 16 512M16 Speed Grade t Package Mark -125 CK = 1.25ns, CL = 11 78-ball 9.0mm x 13.2mm FBGA SN t -107 CK = 1.07ns, CL = 13 96-ball 9.0mm x 14.0mm FBGA HA Note: 1. Not all options listed can be combined to define an offered product. Use the part catalog search on