Product Information

AS6C6416-55TIN

AS6C6416-55TIN electronic component of Alliance Memory

Datasheet
SRAM 64M 3V 55ns Low Power 4048k x 16
Manufacturer: Alliance Memory
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 31.0881 ea
Line Total: USD 31.09

175 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

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469 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

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AS6C6416-55TIN
Alliance Memory

1 : USD 29.5435
10 : USD 28.244
25 : USD 26.6915
50 : USD 26.1625
96 : USD 23.8625
288 : USD 23.552

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RoHS - XON
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Additional Infomation About Product

AS6C6416-55TIN 64M Bits(4Mx16) LOW POWER CMOS SRAM REVISION HISTORY AS6C6416-55TIN 48pin TSOP I Revision Description Issue Date Rev. 1.0 Initial Issue July.2017 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 12 - Rev.1.0 July 2017AS6C6416-55TIN 64M Bits(4Mx16) LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION n Fast access time : 55ns The AS6C6416 is a 67,108,864-bit low power CMOS n Low power consumption: static random access memory organized as Operating current : 12mA (TYP.) 4,194,304 words by 16 bits or 8,388,608 words by 8 bits. It is fabricated using very high performance, high Standby current : 12A(TYP.) reliability CMOS technology. Its standby current is n Single 2.7V ~ 3.6V power supply stable within the range of operating temperature. n All inputs and outputs TTL compatible n Fully static operation n Tri-state output The AS6C6416 is well designed for low power application, and particularly well suited for battery n Data byte control : ) BYTE fixed to V back-up nonvolatile memory application. (i CC LB controlled DQ0 ~ DQ7 The AS6C6416 operates from a single power UB controlled DQ8 ~ DQ15 supply of 2.7V ~ 3.6V and all inputs and outputs are (ii) BYTE fixed to V SS fully TTL compatible DQ15 used as address pin, while DQ8~DQ14 pins not used n Data retention voltage : 1.2V (MIN.) n ROHS Compliant-Pb free n Package : 48-pin 12mm x 20mm TSOP I PRODUCT FAMILY Power Dissipation Product Operating V Range Speed CC Family Temperature Standby(I ,TYP.) Operating(I ,TYP.) SB1 CC AS6C6416-55TIN 2.7 ~ 3.6V 55ns 12A 12mA -40 ~ 85 FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION Vcc SYMBOL DESCRIPTION Vss A0 - A21 Address Inputs(word mode) A-1 - A21 Address Inputs(byte mode) A0~A21 4096Kx16/8192Kx8 DECODER /A-1~A21 MEMORY ARRAY DQ0 - DQ15 Data Inputs/Outputs CE , CE2 Chip Enable Input WE Write Enable Input OE Output Enable Input LB Lower Byte Control DQ0-DQ7 UB Upper Byte Control Lower Byte I/O DATA COLUMN I/O BYTE Byte Enable CIRCUIT DQ8-DQ15 V Power Supply Upper Byte CC V Ground SS CE CE2 WE CONTROL OE CIRCUIT LB UB BYTE Confidential - 2 of 12 - Rev.1.0 July 2017

HS Compliance

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

Alliance Memory may also be referenced as

ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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