Product Information

AS4C8M32S-7TCNTR

AS4C8M32S-7TCNTR electronic component of Alliance Memory

Datasheet
DRAM SDRAM,256M,3.3V 143Mhz,8M x 32
Manufacturer: Alliance Memory
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 5.7669 ea
Line Total: USD 5766.9

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000

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0 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1000
Multiples : 1000

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AS4C8M32S-7TCNTR
Alliance Memory

1000 : USD 5.1405
2000 : USD 5.06
5000 : USD 5.014
10000 : USD 5.014

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Additional Infomation About Product

AS4C8M32S-6TIN AS4C8M32S-7TCN Revision History AS4C8M32S - 86-pin TSOPII PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet Mar. 2016AS4C8M32S-6TIN AS4C8M32S-7TCN Features Overview Fast access time from clock: 5/5.4 ns The 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is Fast clock rate: 166/143MHz internally configured as 4 Banks of 2M word x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, Fully synchronous operation CLK). Read and write accesses to the SDRAM are burst oriented accesses start at a selected location Internal pipelined architecture and continue for a programmed number of locations in a programmed sequence. Accesses begin with the 2M word x 32-bit x 4-bank registration of a BankActivate command which is then followed by a Read or Write command. Programmable Mode registers The SDRAM provides for programmable Read or - CAS Latency: 2, or 3 Write burst lengths of 1, 2, 4, 8, or full page, with a - Burst Length: 1, 2, 4, 8, or full page burst termination option. An auto precharge function - Burst Type: Sequential or Interleaved may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The - Burst stop function refresh functions, either Auto or Self Refresh are easy to use. By having a programmable mode register, the Auto Refresh and Self Refresh system can choose the most suitable modes to maximize its performance. These devices are well 4096 refresh cycles/64ms suited for applications requiring high memory bandwidth and particularly well suited to high CKE power down mode performance PC applications. Single +3.3V 0.3V power supply Operating Temperature: - Commercial (0~70C) - Industrial (-40~85C) Interface: LVTTL 86-pin 400 mil plastic TSOP II package - Pb free and Halogen free Table 1. Key Specifications AS4C8M32S -6/7 tCK3 Clock Cycle time (min.) 6/7 tAC3 Access time from CLK (max.) 5/5.4 tRAS Row Active time (min.) 42/42 tRC Row Cycle time (min.) 60/63 Table 2. Ordering Information Part Number Frequency Package Temperature Temp Range AS4C8M32S-6TIN 166MHz 86 Pin TSOP II Industrial -40~85C 143MHz 86 Pin TSOP II Commercial AS4C8M32S-7TCN 0~70C T:indicates TSOP II package C:Commercial N:indicates Pb free and Halogen free I:Industrial

HS Compliance

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:

Alliance Memory may also be referenced as

ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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