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AS4C8M32S-7BCN

AS4C8M32S-7BCN electronic component of Alliance Memory

Datasheet
DRAM 256Mb, 3.3V, 143Mhz 8M x 32 SDRAM
Manufacturer: Alliance Memory
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

190: USD 6.2291 ea
Line Total: USD 1183.53

0 - Global Stock
MOQ: 190  Multiples: 190
Pack Size: 190

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Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 190
Multiples : 190

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AS4C8M32S-7BCN
Alliance Memory

190 : USD 6.2291

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Additional Infomation About Product

AS4C8M32S Revision History AS4C8M32S- 90 Ball TFBGA PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet February 2013 Rev 1.1 Added 166MHz option -6 clock cycle time February 2013 Rev 2.0 Typing error page 1 fast clock rate error May 2014 133MHz should be 143MHz Typing error - Frequency in Table 2. Ordering information May 2014 7-BCN reflected as 133MHz changed to 143MHz Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice. AS4C8M32S 8M x 32 bit Synchronous DRAM (SDRAM) Confidential Advanced (Rev. 2.0 May /2014) Features Overview Fast access time from clock: 5/5.4 ns The 256Mb AS4C8M32S SDRAM is a high- Fast clock rate: 166/143MHz speed CMOS synchronous DRAM containing 256 Fully synchronous operation Mbits. It is internally configured as 4 Banks of 2M Internal pipelined architecture word x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the 2M word x 32-bit x 4-bank clock signal, CLK). Read and write accesses to the Programmable Mode registers SDRAM are burst oriented accesses start at a - CAS Latency: 2, or 3 selected location and continue for a programmed - Burst Length: 1, 2, 4, 8, or full page number of locations in a programmed sequence. - Burst Type: Sequential & interleaved Accesses begin with the registration of a - Burst stop function BankActivate command which is then followed by a Auto Refresh and Self Refresh Read or Write command. Operating temperature range The SDRAM provides for programmable Read - Commercial (0 ~ 70C) or Write burst lengths of 1, 2, 4, 8, or full page, with - Industrial (-40 ~ 85C) a burst termination option. An auto precharge 4096 refresh cycles/64ms function may be enabled to provide a self-timed row CKE power down mode precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Single +3.3V power supply Refresh are easy to use. Interface: LVTTL 90-ball, 8.0 x 13 x 1.4mm TFBGA package By having a programmable mode register, the system can choose the most suitable modes to - Pb and Halogen Free maximize its performance. These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications Table 1. Key Specifications AS4C8M32S -6/7 Clock Cycle time(min.) 6/7.5 ns tCK3 tAC3 Access time from CLK (max.) 5/5.4 ns tRAS Row Active time(min.) 42/45 ns Row Cycle time(min.) tRC 60/67.5 ns Table 2.Ordering Information Part Number Frequency Package Temperature Temp Range AS4C8M32S-6BIN 166MHz 90-ball TFBGA Industrial -40 ~ 85C 143MHz 90-ball TFBGA Commercial 0 ~ 70C AS4C8M32S-7BCN B: indicates 90-ball (8.0 x 13 x 1.4mm) TFBGA package N: indicates Pb and Halogen Free ROHS Alliance Memory, Inc. 551 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory, Inc. reserves the right to change products or specification without notice.

HS Compliance

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:

Alliance Memory may also be referenced as

ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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