Product Information

AS4C8M16SA-6TINTR

AS4C8M16SA-6TINTR electronic component of Alliance Memory

Datasheet
DRAM

Manufacturer: Alliance Memory
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.255 ea
Line Total: USD 4.26

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

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AS4C8M16SA-6TINTR
Alliance Memory

1 : USD 4.255
10 : USD 3.91
100 : USD 3.5075
250 : USD 3.496
500 : USD 3.3695
1000 : USD 3.2085
2000 : USD 3.197
5000 : USD 3.151
10000 : USD 3.1395

     
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AS4C8M16SA 128M - 8M x 16 bit Synchronous DRAM (SDRAM) Confidential (Rev. 2.2, March 2014) Features Overview Fast access time from clock: 5/5.4 ns The 128Mb SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is Fast clock rate: 166/143 MHz internally configured as 4 Banks of 2M word x 16 Fully synchronous operation DRAM with a synchronous interface (all signals are Internal pipelined architecture registered on the positive edge of the clock signal, 2M word x 16-bit x 4-bank CLK). Read and write accesses to the SDRAM are Programmable Mode registers burst oriented accesses start at a selected location - CAS Latency: 2, or 3 and continue for a programmed number of locations - Burst Length: 1, 2, 4, 8, or full page in a programmed sequence. Accesses begin with the registration of a BankActivate command which - Burst Type: Sequential or Interleaved is then followed by a Read or Write command. - Burst stop function Operating temperature range The SDRAM provides for programmable Read - Commercial (0 ~ 70C) or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge - Industrial (-40 ~ 85C) function may be enabled to provide a self-timed row Auto Refresh and Self Refresh precharge that is initiated at the end of the burst 4096 refresh cycles/64ms sequence. The refresh functions, either Auto or Self CKE power down mode Refresh are easy to use. Single +3.3V 0.3V power supply By having a programmable mode register, the Interface: LVTTL system can choose the most suitable modes to 54-pin 400 mil plastic TSOP II package maximize its performance. These devices are well 54-ball 8.0 x 8.0 x 1.2mm (max) FBGA package suited for applications requiring high memory All parts ROHS Compliant bandwidth and particularly well suited to high performance PC applications. Table 1. Key Specifications AS4C16M16S -6/7 tCK3 Clock Cycle time (min.) 6/7 ns tAC3 Access time from CLK (max.) 5.4/5.4 ns tRAS Row Active time (min.) 42/42 ns tRC Row Cycle time (min.) 60/63 ns Table 2. Ordering Information Part Number Frequency Package AS4C8M16SA-7TCN 143 MHz 54 pin TSOP II AS4C8M16SA-6TCN 166 MHz 54 pin TSOP II AS4C8M16SA-6TIN 166 MHz 54 pin TSOP II AS4C8M16SA-6BIN 166 MHz 54 ball TFBGA AS4C8M16SA-7BCN 143 MHz 54 ball TFBGA T : indicates TSOP II package B : indicates TFBGA package N : indicates Pb free and Halogen free ROHS compliant parts C: Commercial I: Industrial Confidential 1 Rev. 2.2 Mar /2014 AS4C8M16SA Figure 1. Pin Assignment (Top View) VDD 1 54 VSS DQ0 2 53 DQ15 VDDQ 3 52 VSSQ DQ1 4 51 DQ14 DQ2 5 50 DQ13 VSSQ 6 49 VDDQ DQ3 7 48 DQ12 DQ4 8 47 DQ11 VDDQ 9 46 VSSQ DQ5 10 45 DQ10 DQ6 11 44 DQ9 VSSQ 12 43 VDDQ DQ7 13 42 DQ8 VDD 14 41 VSS LDQM 15 40 NC/RFU WE 16 39 UDQM CAS 17 38 CLK RAS 18 37 CKE CS 19 36 NC BA0 20 35 A11 BA1 21 34 A9 A10/AP 22 33 A8 A0 23 32 A7 A1 24 31 A6 A2 25 30 A5 A3 26 29 A4 VDD 27 28 VSS Figure 1.1 Ball Assignment (Top View) 1 2 3 7 8 9 VSS DQ15 VSSQ VDDQ DQ0 VDD A DQ14 DQ13 VDDQ VSSQ DQ2 DQ1 B D Q12 DQ11 VSSQ VD DQ DQ4 DQ3 C DQ10 DQ9 VDDQ VSSQ DQ6 DQ5 D DQ8 NC VSS VDD LDQM DQ7 E UDQM CLK CKE CAS RAS WE F NC A11 A9 BA0 BA1 CS G A 8 A7 A6 A 0 A1 A10 H VSS A5 A4 A3 A2 VDD J Confidential 2 Rev. 2.2 Mar /2014

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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