Product Information

AS4C4M16SB-6TIN

AS4C4M16SB-6TIN electronic component of Alliance Memory

Datasheet
DRAM
Manufacturer: Alliance Memory
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.7657 ea
Line Total: USD 4.77

3343 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
3290 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

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AS4C4M16SB-6TIN
Alliance Memory

1 : USD 3.2085
10 : USD 2.921
108 : USD 2.6565
5076 : USD 2.3805
10044 : USD 2.346
25056 : USD 2.3115

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Additional Infomation About Product

AS4C4M16SB Revision History 4M x 16 SDRAM 54-PIN TSOP Package Revision Details Date Rev 1.0 Initial Release Apr. 2021 Alliance Memory Inc. reserves the right to change products or specification without notice. 12815 NE 124th Street Suite D, Kirkland, WA 98034 USA Main +1(425)868-4456 Fax:+1 (425)898-8628 Confidential - 154 - Rev.1.0 Apr. 2021AS4C4M16SB 4M x 16 bit Synchronous DRAM (SDRAM) (Rev. 1.0, Apr. /2021) Features Overview The AS4C4M16SB SDRAM is a high-speed Fast access time from clock: 5 ns CMOS synchronous DRAM containing 64 Mbits. It is Fast clock rate: 166 MHz internally configured as 4 Banks of 1M word x 16 Fully synchronous operation DRAM with a synchronous interface (all signals are Internal pipelined architecture registered on the positive edge of the clock signal, 1M word x 16-bit x 4-bank CLK). Read and write accesses to the SDRAM are Programmable Mode registers burst oriented accesses start at a selected location and continue for a programmed number of locations - CAS Latency: 2 or 3 in a programmed sequence. Accesses begin with - Burst Length: 1, 2, 4, 8, or full page the registration of a BankActivate command which is - Burst Type: Sequential or Interleaved then followed by a Read or Write command. - Burst stop function Auto Refresh and Self Refresh The AS4C4M16SB provides for programmable Read 4096 refresh cycles/64ms or Write burst lengths of 1, 2, 4, 8, or full page, with CKE power down mode a burst termination option. An auto precharge function may be enabled to provide a self-timed row Single +3.3V 0.3V power supply precharge that is initiated at the end of the burst Operating temperature: T = -40~85C (Industrial) A sequence. The refresh functions, either Auto or Self Interface: LVTTL Refresh are easy to use. By having a programmable Package: Pb free and Halogen free mode register, the system can choose the most - 54-pin 400 mil plastic TSOP II suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications. Table 1. Key Specifications -6 Unit AS4C4M16SB-6TIN 6 ns Clock Cycle time(min.) tCK3 5 ns Access time from CLK (max.) tAC3 42 ns Row Active time(min.) tRAS 60 ns Row Cycle time(min.) tRC Table 2. Ordering Information Package Temperature Temp Range Frequency Part Number AS4C4M16SB-6TIN 166MHz 54 Pin TSOP II Industrial -40C to 85C Confidential - 254 - Rev.1.0 Apr. 2021

HS Compliance

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:

Alliance Memory may also be referenced as

ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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