Product Information

AS4C2M32S-6BINTR

AS4C2M32S-6BINTR electronic component of Alliance Memory

Datasheet
DRAM 64M, 3.3V, 2M x 32 SDRAM

Manufacturer: Alliance Memory
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2000: USD 5.4 ea
Line Total: USD 10800

0 - Global Stock
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 2000
Multiples : 2000

Stock Image

AS4C2M32S-6BINTR
Alliance Memory

2000 : USD 4.7104
10000 : USD 4.7104

     
Manufacturer
Product Category
Type
Mounting Style
Package / Case
Data Bus Width
Organisation
Memory Size
Maximum Clock Frequency
Access Time
Supply Voltage - Max
Supply Voltage - Min
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Hts Code
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
AS6C8008-55ZIN electronic component of Alliance Memory AS6C8008-55ZIN

SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM
Stock : 8

AS7C256A-15JIN electronic component of Alliance Memory AS7C256A-15JIN

SRAM 256K, 5V, 15ns, FAST 32K x 8 Asynch SRAM
Stock : 0

AS7C31025B-12TJIN electronic component of Alliance Memory AS7C31025B-12TJIN

SRAM 1M, 3.3V, 12ns, FAST 128K x 8 Asynch SRAM
Stock : 98

AS7C256A-10TCN electronic component of Alliance Memory AS7C256A-10TCN

SRAM 256K, 5V, 10ns, FAST 32K x 8 Asynch SRAM
Stock : 200

AS4C32M16D1-5TCN electronic component of Alliance Memory AS4C32M16D1-5TCN

Alliance Memory DRAM 512Mb, 3.3V, 200Mhz 32M x 16 DDR
Stock : 1

AS8C163631-QC166N electronic component of Alliance Memory AS8C163631-QC166N

SRAM 16M, 2.5V, 166MHz 512K x 36 Synch SRAM
Stock : 4

U62256AS2K07LLG1 electronic component of Alliance Memory U62256AS2K07LLG1

SRAM ZMD 32K x 8 5V Asynch
Stock : 0

AS4C128M8D3LB-12BIN electronic component of Alliance Memory AS4C128M8D3LB-12BIN

DRAM 1G 1.35V 800MHz 128Mx8 DDR3 I-Temp
Stock : 1

AS7C1024B-15JCNTR electronic component of Alliance Memory AS7C1024B-15JCNTR

SRAM 1M, 5V, 15ns FAST 128K x 8 Asynch SRAM
Stock : 1

PC28F512P33BFD electronic component of Alliance Memory PC28F512P33BFD

NOR Flash Parallel NOR Flash, 512Mb, 2.3V to 3.6V, 95ns, Bottom Boot, -40C to 85C, 64b BGA
Stock : 0

Image Description
AS4C32M16D1-5TCN electronic component of Alliance Memory AS4C32M16D1-5TCN

Alliance Memory DRAM 512Mb, 3.3V, 200Mhz 32M x 16 DDR
Stock : 1

IS43TR16640BL-125JBL electronic component of ISSI IS43TR16640BL-125JBL

DRAM 1G, 1.35V, DDR3L, 64Mx16, 1600MT/s @ 10-10-10, 96 ball BGA (9mm x13mm) RoHS
Stock : 1

Hot IS43DR16320E-25DBLI electronic component of ISSI IS43DR16320E-25DBLI

DRAM 512M 32Mx16 400MHz DDR2 1.8V
Stock : 1901

W9751G6KB-25 electronic component of Winbond W9751G6KB-25

DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin WBGA
Stock : 0

MT48LC4M32B2P-6A:L TR electronic component of Micron MT48LC4M32B2P-6A:L TR

DRAM SDRAM 128M 4MX32 TSOP
Stock : 0

IS42S32800J-75EBL electronic component of ISSI IS42S32800J-75EBL

DRAM 256M, 3.3V, SDRAM, 8Mx32, 133Mhz @ CL2, 90 ball BGA (8mmx13mm) RoHS
Stock : 0

IS43DR86400E-3DBLI electronic component of ISSI IS43DR86400E-3DBLI

DRAM 512M, 1.8V, DDR2, 64Mx8, 333Mhz @ CL5, 60 ball BGA (8mmx10.5mm) RoHS, IT
Stock : 242

AS4C128M8D3LB-12BIN electronic component of Alliance Memory AS4C128M8D3LB-12BIN

DRAM 1G 1.35V 800MHz 128Mx8 DDR3 I-Temp
Stock : 1

IS43R16320F-6TLI electronic component of ISSI IS43R16320F-6TLI

DRAM 512M 32Mx16 166MHz DDR 2.5V
Stock : 0

W631GG6NB-12 electronic component of Winbond W631GG6NB-12

DRAM 1Gb DDR3 SDRAM, x16, 800MHz
Stock : 1

AS4C2M32S 2M x 32 bit Synchronous DRAM (SDRAM) Confidential Advanced (Rev. 3.0, Dec. /2012) Features Overview Fast access time: 5.4/5.4 ns The 64Mb SDRAM is a high-speed CMOS synchronous DRAM containing 64 Mbits. It is Fast Clock rate: 166/143 MHz internally configured as a quad 512K x 32 DRAM Fully synchronous operation with a synchronous interface (all signals are Internal pipelined architecture registered on the positive edge of the clock signal, Four internal banks (512K x 32bit x 4bank) CLK). Each of the 512K x 32 bit banks is organized Programmable Mode as 2048 rows by 256 columns by 32 bits. Read and - CAS Latency: 2 or 3 write accesses to the SDRAM are burst oriented - Burst Length: 1, 2, 4, 8, or full page accesses start at a selected location and continue for a programmed number of locations in a programmed - Burst Type: Sequential or Interleaved sequence. Accesses begin with the registration of a - Burst-Read-Single-Write BankActivate command which is then followed by a Burst stop function Read or Write command. Individual byte controlled by DQM0-3 The SDRAM provides for programmable Read Auto Refresh and Self Refresh or Write burst lengths of 1, 2, 4, 8, or full page, with a Operating temperature range burst termination option. An auto precharge function - Commercial (0 ~ 70C) may be enabled to provide a self-timed row - Industrial (-40 ~ 85C) precharge that is initiated at the end of the burst 4096 refresh cycles/64ms sequence. The refresh functions, either Auto or Self Refresh are easy to use. Single +3.3V 0.3V power supply Interface: LVTTL By having a programmable mode register, the system can choose the most suitable modes to 90-ball 8 x 13 x 1.2mm TFBGA package maximize its performance. These devices are well - Pb and Halogen Free suited for applications requiring high memory bandwidth. Table 1. Key Specifications AS4C2M32S -6/7 Clock Cycle time(min.) 6/7 ns tCK3 tAC3 Access time from CLK (max.) 5.4/5.4 ns tRAS Row Active time(min.) 42/42 ns tRC Row Cycle time(min.) 60/63 ns Table 2.Ordering Information Part Number Frequency Package Temperature Temp Range AS4C2M32S-6BIN 166MHz 90-ball TFBGA Industrial -40 ~ 85C AS4C2M32S-7BCN 143MHz 90-ball TFBGA Commercial 0 ~ 70C B: indicates 90-ball (8 x 13 x 1.2mm) TFBGA package N: indicates Pb and Halogen Free Confidential 1 Rev. 3.0 Dec. /2012 AS4C2M32S Figure 1. Ball Assignment (Top View) 1 2 3 7 8 9 DQ26 DQ24 VSS VDD DQ23 DQ21 A DQ28 VDDQ VSSQ VDDQ VSSQ DQ19 B VSSQ DQ27 DQ25 DQ22 DQ20 VDDQ C VSSQ DQ29 DQ30 DQ17 DQ18 VDDQ D VDDQ DQ31 NC NC DQ16 VSSQ E VSS DQM3 A3 A2 DQM2 VDD F A4 A5 A6 A10 A0 A1 G A7 A8 NC NC BA1 NC H CLK CKE A9 BA0 CS RAS J DQM1 NC NC CAS WE DQM0 K VDDQ DQ8 VSS VDD DQ7 VSSQ L VSSQ DQ10 DQ9 DQ6 DQ5 VDDQ M VSSQ DQ12 DQ14 DQ1 DQ3 VDDQ N DQ11 VDDQ VSSQ VDDQ VSSQ DQ4 P DQ13 DQ15 VSS VDD DQ0 DQ2 R Confidential 2 Rev. 3.0 Dec. /2012

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted