Product Information

AS4C256M16D3LB-10BCN

AS4C256M16D3LB-10BCN electronic component of Alliance Memory

Datasheet
DRAM 4G DDR3 256M X 16 1.35V 96-BALL FBGA 1866MHZ COMMERCIAL TEMP

Manufacturer: Alliance Memory
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 180
Multiples : 180

Stock Image

AS4C256M16D3LB-10BCN
Alliance Memory

180 : USD 9.414
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

AS4C256M16D3LB-10BCN
Alliance Memory

1 : USD 11.9902
10 : USD 10.7863
25 : USD 10.5411
50 : USD 10.4854
100 : USD 9.6497
180 : USD 9.1594
540 : USD 9.0703
1080 : USD 8.9366
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Type
Mounting Style
Package / Case
Data Bus Width
Memory Size
Maximum Clock Frequency
Supply Voltage - Max
Supply Voltage - Min
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Series
Organization
Brand
Moisture Sensitive
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
AS6C8008-55ZIN electronic component of Alliance Memory AS6C8008-55ZIN

SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM
Stock : 8

AS7C256A-15JIN electronic component of Alliance Memory AS7C256A-15JIN

SRAM 256K, 5V, 15ns, FAST 32K x 8 Asynch SRAM
Stock : 0

AS7C31025B-12TJIN electronic component of Alliance Memory AS7C31025B-12TJIN

SRAM 1M, 3.3V, 12ns, FAST 128K x 8 Asynch SRAM
Stock : 98

AS7C256A-10TCN electronic component of Alliance Memory AS7C256A-10TCN

SRAM 256K, 5V, 10ns, FAST 32K x 8 Asynch SRAM
Stock : 200

AS4C32M16D1-5TCN electronic component of Alliance Memory AS4C32M16D1-5TCN

Alliance Memory DRAM 512Mb, 3.3V, 200Mhz 32M x 16 DDR
Stock : 1

AS8C163631-QC166N electronic component of Alliance Memory AS8C163631-QC166N

SRAM 16M, 2.5V, 166MHz 512K x 36 Synch SRAM
Stock : 4

U62256AS2K07LLG1 electronic component of Alliance Memory U62256AS2K07LLG1

SRAM ZMD 32K x 8 5V Asynch
Stock : 0

AS4C128M8D3LB-12BIN electronic component of Alliance Memory AS4C128M8D3LB-12BIN

DRAM 1G 1.35V 800MHz 128Mx8 DDR3 I-Temp
Stock : 1

AS7C1024B-15JCNTR electronic component of Alliance Memory AS7C1024B-15JCNTR

SRAM 1M, 5V, 15ns FAST 128K x 8 Asynch SRAM
Stock : 1

PC28F512P33BFD electronic component of Alliance Memory PC28F512P33BFD

NOR Flash Parallel NOR Flash, 512Mb, 2.3V to 3.6V, 95ns, Bottom Boot, -40C to 85C, 64b BGA
Stock : 0

Image Description
AS4C32M16D1-5TCN electronic component of Alliance Memory AS4C32M16D1-5TCN

Alliance Memory DRAM 512Mb, 3.3V, 200Mhz 32M x 16 DDR
Stock : 1

IS43TR16640BL-125JBL electronic component of ISSI IS43TR16640BL-125JBL

DRAM 1G, 1.35V, DDR3L, 64Mx16, 1600MT/s @ 10-10-10, 96 ball BGA (9mm x13mm) RoHS
Stock : 1

Hot IS43DR16320E-25DBLI electronic component of ISSI IS43DR16320E-25DBLI

DRAM 512M 32Mx16 400MHz DDR2 1.8V
Stock : 1901

W9751G6KB-25 electronic component of Winbond W9751G6KB-25

DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin WBGA
Stock : 0

MT48LC4M32B2P-6A:L TR electronic component of Micron MT48LC4M32B2P-6A:L TR

DRAM SDRAM 128M 4MX32 TSOP
Stock : 0

IS42S32800J-75EBL electronic component of ISSI IS42S32800J-75EBL

DRAM 256M, 3.3V, SDRAM, 8Mx32, 133Mhz @ CL2, 90 ball BGA (8mmx13mm) RoHS
Stock : 0

IS43DR86400E-3DBLI electronic component of ISSI IS43DR86400E-3DBLI

DRAM 512M, 1.8V, DDR2, 64Mx8, 333Mhz @ CL5, 60 ball BGA (8mmx10.5mm) RoHS, IT
Stock : 242

AS4C128M8D3LB-12BIN electronic component of Alliance Memory AS4C128M8D3LB-12BIN

DRAM 1G 1.35V 800MHz 128Mx8 DDR3 I-Temp
Stock : 1

IS43R16320F-6TLI electronic component of ISSI IS43R16320F-6TLI

DRAM 512M 32Mx16 166MHz DDR 2.5V
Stock : 0

W631GG6NB-12 electronic component of Winbond W631GG6NB-12

DRAM 1Gb DDR3 SDRAM, x16, 800MHz
Stock : 1

AS4C256M16D3LB Revision History 4Gb AS4C256M16D3LB 96 ball FBGA PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet Apr. 2016 Rev 1.1 Add Industrial part datasheet Jan. 2017 Rev 1.2 Add 1866Mbps / 933 MHz speed option Feb.2019 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 54 - Rev.1.2 Feb. 2019AS4C256M16D3LB Specifications Features - Density : 4G bits - Double-data-rate architecture two data transfers per clock cycle - Organization : 32M words x 16 bits x 8 banks - Package : - The high-speed data transfer is realized by the 8 bits - 96-ball FBGA prefetch pipelined architecture - Lead-free (RoHS compliant) and Halogen-free - Bi-directional differential data strobe (DQS and DQS) is - Power supply : VDD, VDDQ = 1.35V (1.283V to 1.45V) transmitted/received with data for capturing data at the re- - Backward compatible to VDD, VDDQ = 1.5V 0.075V ceiver - Data rate : - DQS is edge-aligned with data for READs center-aligned - 1600Mbps with data for WRITEs - 1866Mbps - Differential clock inputs (CK and CK) - 2KB page size - DLL aligns DQ and DQS transitions with CK transitions - Row address: A0 to A14 - Commands entered on each positive CK edge data and - Column address: A0 to A9 data mask referenced to both edges of DQS - Eight internal banks for concurrent operation - Data mask (DM) for write data - Burst lengths (BL) : 8 and 4 with Burst Chop (BC) - Posted CAS by programmable additive latency for better - Burst type (BT) : command and data bus efficiency - Sequential (8, 4 with BC) - On-Die Termination (ODT) for better signal quality - Interleave (8, 4 with BC) - Synchronous ODT - CAS Latency (CL) : 5, 6, 7, 8, 9, 10, 11,13 - Dynamic ODT - CAS Write Latency (CWL) : 5, 6, 7, 8, 9 - Precharge : auto precharge option for each burst access - Asynchronous ODT - Driver strength : RZQ/7, RZQ/6 (RZQ = 240 ) - Multi Purpose Register (MPR) for pre-defined pattern read - Refresh : auto-refresh, self-refresh out - Refresh cycles : - Average refresh period - ZQ calibration for DQ drive and ODT 7.8 s at -40C Tc +85C - Programmable Partial Array Self-Refresh (PASR) 3.9 s at +85C < Tc +95C - RESET pin for Power-up sequence and reset function - Operating case temperature range - SRT range : Normal/extended - Commercial Tc = 0C to +95C - Programmable Output driver impedance control - Industrial Tc = -40C to +95C Table 1. Ordering Information Part Number Org Temperature MaxClock (MHz) Package AS4C256M16D3LB-12BCN 800 256Mx16 96-ball FBGA Commercial 0C to +95C AS4C256M16D3LB-12BIN 800 256Mx16 96-ball FBGA Industrial -40C to +95C AS4C256M16D3LB-10BCN 933 256Mx16 96-ball FBGA Commercial 0C to +95C AS4C256M16D3LB-10BIN 933 256Mx16 96-ball FBGA Industrial -40C to +95C Table 2. Speed Grade Information Speed Grade Clock Frequency CAS Latency tRCD (ns ) tRP (ns ) DDR3L-1600 800MHz 11 13.75 13.75 DDR3L-1866 933MHz 1 3 13. 91 13. 91 Confidential - 2 of 54 - Rev.1.2 Feb. 2019

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted