Product Information

AS4C256M16D3LA-12BIN

AS4C256M16D3LA-12BIN electronic component of Alliance Memory

Datasheet
DRAM 4G 1.35V 800MHz 256M x 16 DDR3
Manufacturer: Alliance Memory
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Multiples : 190

Stock Image

AS4C256M16D3LA-12BIN
Alliance Memory

N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

AS4C256M16D3LA-12BIN
Alliance Memory

1 : USD 12.7217
10 : USD 11.3047
25 : USD 11.2406
50 : USD 11.1764
100 : USD 9.9477
250 : USD 9.6058
500 : USD 9.4455
1000 : USD 9.189
2000 : USD 8.9647
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

AS4C256M16D3LA-12BIN
Alliance Memory

1 : USD 12.1875
2 : USD 7.7179
5 : USD 7.2971
100 : USD 7.2047
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Type
Mounting Style
Package / Case
Data Bus Width
Memory Size
Maximum Clock Frequency
Access Time
Supply Voltage - Max
Supply Voltage - Min
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Organization
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

More Products By Manufacturer "Alliance Memory"

Image Description
AS6C8008-55ZIN electronic component of Alliance Memory AS6C8008-55ZIN

SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM
Stock : 8

AS7C256A-15JIN electronic component of Alliance Memory AS7C256A-15JIN

SRAM 256K, 5V, 15ns, FAST 32K x 8 Asynch SRAM
Stock : 0

AS7C31025B-12TJIN electronic component of Alliance Memory AS7C31025B-12TJIN

SRAM 1M, 3.3V, 12ns, FAST 128K x 8 Asynch SRAM
Stock : 98

AS7C256A-10TCN electronic component of Alliance Memory AS7C256A-10TCN

SRAM 256K, 5V, 10ns, FAST 32K x 8 Asynch SRAM
Stock : 200

AS4C32M16D1-5TCN electronic component of Alliance Memory AS4C32M16D1-5TCN

Alliance Memory DRAM 512Mb, 3.3V, 200Mhz 32M x 16 DDR
Stock : 1

AS8C163631-QC166N electronic component of Alliance Memory AS8C163631-QC166N

SRAM 16M, 2.5V, 166MHz 512K x 36 Synch SRAM
Stock : 4

U62256AS2K07LLG1 electronic component of Alliance Memory U62256AS2K07LLG1

SRAM ZMD 32K x 8 5V Asynch
Stock : 0

AS4C128M8D3LB-12BIN electronic component of Alliance Memory AS4C128M8D3LB-12BIN

DRAM 1G 1.35V 800MHz 128Mx8 DDR3 I-Temp
Stock : 1

AS7C1024B-15JCNTR electronic component of Alliance Memory AS7C1024B-15JCNTR

SRAM 1M, 5V, 15ns FAST 128K x 8 Asynch SRAM
Stock : 1

PC28F512P33BFD electronic component of Alliance Memory PC28F512P33BFD

NOR Flash Parallel NOR Flash, 512Mb, 2.3V to 3.6V, 95ns, Bottom Boot, -40C to 85C, 64b BGA
Stock : 0

More Products By Category "DRAM"

Image Description
AS4C32M16D1-5TCN electronic component of Alliance Memory AS4C32M16D1-5TCN

Alliance Memory DRAM 512Mb, 3.3V, 200Mhz 32M x 16 DDR
Stock : 1

IS43TR16640BL-125JBL electronic component of ISSI IS43TR16640BL-125JBL

DRAM 1G, 1.35V, DDR3L, 64Mx16, 1600MT/s @ 10-10-10, 96 ball BGA (9mm x13mm) RoHS
Stock : 1

Hot IS43DR16320E-25DBLI electronic component of ISSI IS43DR16320E-25DBLI

DRAM 512M 32Mx16 400MHz DDR2 1.8V
Stock : 1901

W9751G6KB-25 electronic component of Winbond W9751G6KB-25

DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin WBGA
Stock : 0

MT48LC4M32B2P-6A:L TR electronic component of Micron MT48LC4M32B2P-6A:L TR

DRAM SDRAM 128M 4MX32 TSOP
Stock : 0

IS42S32800J-75EBL electronic component of ISSI IS42S32800J-75EBL

DRAM 256M, 3.3V, SDRAM, 8Mx32, 133Mhz @ CL2, 90 ball BGA (8mmx13mm) RoHS
Stock : 0

IS43DR86400E-3DBLI electronic component of ISSI IS43DR86400E-3DBLI

DRAM 512M, 1.8V, DDR2, 64Mx8, 333Mhz @ CL5, 60 ball BGA (8mmx10.5mm) RoHS, IT
Stock : 242

AS4C128M8D3LB-12BIN electronic component of Alliance Memory AS4C128M8D3LB-12BIN

DRAM 1G 1.35V 800MHz 128Mx8 DDR3 I-Temp
Stock : 1

IS43R16320F-6TLI electronic component of ISSI IS43R16320F-6TLI

DRAM 512M 32Mx16 166MHz DDR 2.5V
Stock : 0

W631GG6NB-12 electronic component of Winbond W631GG6NB-12

DRAM 1Gb DDR3 SDRAM, x16, 800MHz
Stock : 1

Additional Infomation About Product

AS4C256M16D3LA-12BIN Revision History 4Gb AS4C256M16D3LA-12BIN - 96 ball FBGA PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet May. 2016 Rev 1.1 add CL=5,CWL=5 and CL=6,CWL=5 in table 18 Nov. 2016 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential -1/83- Rev. 1.1 Nov. 2016AS4C256M16D3LA-12BIN 256M x 16 bit DDR3L Synchronous DRAM (SDRAM) Overview Features JEDEC Standard Compliant The 4Gb Double-Data-Rate-3 (DDR3L) DRAMs is double data rate architecture to achieve high-speed Power supplies: V & V = +1.35V DD DDQ operation. It is internally configured as an eight bank Backward compatible to V & V = 1.5V 0.075V DD DDQ DRAM. Operating temperature: -40~95 C (TC) The 4Gb chip is organized as 32Mbit x 16 I/Os x 8 Supports JEDEC clock jitter specification bank devices. These synchronous devices achieve Fully synchronous operation high speed double-data-rate transfer rates of up to Fast clock rate: 800 MHz 1600 Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3L Differential Clock, CK & CK DRAM key features and all of the control and address Bidirectional differential data strobe inputs are synchronized with a pair of externally - DQS & DQS supplied differential clocks. Inputs are latched at the 8 internal banks for concurrent operation cross point of differential clocks (CK rising and CK 8n-bit prefetch architecture falling). All I/Os are synchronized with differential DQS Pipelined internal architecture pair in a source synchronous fashion. Precharge & active power down These devices operate with a single 1.35V -0.067V Programmable Mode & Extended Mode registers /+0.1V power supply and are available in BGA packages. Additive Latency (AL): 0, CL-1, CL-2 Programmable Burst lengths: 4, 8 Burst type: Sequential / Interleave Output Driver Impedance Control 8192 refresh cycles / 64ms - Average refresh period 7.8 s -40C TC +85C 3.9 s +85C TC +95C Write Leveling ZQ Calibration Dynamic ODT (Rtt Nom & Rtt WR) RoHS compliant Auto Refresh and Self Refresh 96-ball 9 x 13 x 1.0mm FBGA package - Pb and Halogen Free Table 1. Ordering Information Package Org Temperature Product part No Max Clock (MHz) AS4C 256M16D3 LA-12BIN 256M x 16 800 96-ball FBGA Industrial -40C to 95C Table 2. Speed Grade Information Speed Grade Clock Frequency CAS Latency t (ns) t (ns) RCD RP 13.75 13.75 800 MHz 11 DDR3 L-1600 Confidential -2/83- Rev. 1.1 Nov. 2016

HS Compliance

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:

Alliance Memory may also be referenced as

ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

Looking for help? Visit our FAQ's Section to answer to all your questions

Resources

Company

Support

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
  +61 8 9358 9358 |   sales@x-on.com.au |   Chat
 
Policies | Terms and Conditions | Sitemap

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted