Product Information

AS4C16M16SB-6BINTR

AS4C16M16SB-6BINTR electronic component of Alliance Memory

Datasheet
DRAM
Manufacturer: Alliance Memory
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 5.0279 ea
Line Total: USD 12569.75

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500

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Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 2500
Multiples : 2500

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AS4C16M16SB-6BINTR
Alliance Memory

2500 : USD 4.3355
5000 : USD 4.3355
10000 : USD 4.3355

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Additional Infomation About Product

AS4C16M16SB Revision History 256M SDRAM (54pin TSOP II & 54ball FBGA Package) Revision Details Date Rev 1.0 Initial Release Jan. 2021 Rev 2.0 New Part Number AS4C16M16SB-6BIN (54ball FBGA) added June 2021 Confidential Rev.2.0 June 2021 -156-AS4C16M16SB 16M x 16 bit Synchronous DRAM (SDRAM) Features Overview Fast access time from clock: 5/5.4 ns The AS4C16M16SB SDRAM is a high-speed Fast clock rate: 166/143 MHz CMOS synchronous DRAM containing 256 Mbits. I t Fully synchronous operation is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals ar e Internal pipelined architecture registered on the positive edge of the clock signal , 4M word x 16-bit x 4-bank CLK). Read and write accesses to the SDRAMar e Programmable Mode registers burst oriented accesses start at a selected location - CAS Latency: 2 or 3 and continue for a programmed number of locations - Burst Length: 1, 2, 4, 8, or full page in a programmed sequence. Accesses begin with - Burst Type: Sequential or Interleaved the registration of a BankActivate command which is - Burst stop function then followed by a Read or Write command. Auto Refresh and Self Refresh The AS4C16M16SB provides for programmable 8192 refresh cycles/64ms Read or Write burst lengths of 1, 2, 4, 8, or full page, CKE power down mode with a burst termination option. An auto prechar ge Single +3.3V 0.3V power supply function may be enabled to provide a sel-ftimed row Operating temperature: precharge that is initiated at the end of the bur st Commercial:TA = 0 ~ 70C sequence. The refresh functions, either Auto or Sel f Refresh are easy to use. By having a programmable Industrial:TA = -40 ~ 85C mode register, the system can choose the most Interface: LVTTL suitable modes to maximize its performance. These 54-pin 400 mil plastic TSOP II package devices are well suited for applications requiring - Pb free and Halogen free high memory bandwidth and particularly well suited 54-ball 8.0 x 8.0 x 1.2mm (max) FBGA package to high performance PC applications. - Pb free and Halogen free Table 1. Key Specifications -6 -7 Unit AS4C16M16SB 6 7 tCK3 ns Clock Cycle time(min.) 5 5.4 tAC3 ns Access time from CLK (max.) 42 42 ns tRAS Row Active time(min.) 60 63 ns tRC Row Cycle time(min.) Table 2. Ordering Information Package Temperature Temp Range Frequency Part Number Commercial AS4C16M16SB-7TCN 143MHz 0C to 70C 54 Pin TSOP II AS4C16M16SB-6TIN 166MHz 54 Pin TSOP II Industrial -40C to 85C AS4C16M16SB-6BIN 166MHz 54 ball FBGA Industrial -40C to 85C Confidential Rev.2.0 June 2021 -256-

HS Compliance

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:

Alliance Memory may also be referenced as

ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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