Product Information

AS4C128M16MD2-25BCN

AS4C128M16MD2-25BCN electronic component of Alliance Memory

Datasheet
DRAM 2G 1.2V/1.8V 400MHz 128Mx16 Mobile DDR2
Manufacturer: Alliance Memory
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 10.1072 ea
Line Total: USD 10.11

290 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
290 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

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AS4C128M16MD2-25BCN
Alliance Memory

1 : USD 6.6585
10 : USD 6.1525
100 : USD 5.52
256 : USD 5.497
512 : USD 5.244
1024 : USD 5.014
2560 : USD 4.8645
5120 : USD 4.7955
10112 : USD 4.669

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Additional Infomation About Product

AS4C64M32MD2-25BCN AS4C128M16MD2-25BCN Revision History AS4C64M32MD2-25BCN / AS4C128M16MD2-25BCN 134 ball FBGA PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet July. 2016 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1/129 - Rev.1.0 July 2016AS4C64M32MD2-25BCN AS4C128M16MD2-25BCN KEY FEATURE Double-data rate architecture two data transfers per clock cycle Bidirectional data strobes (DQS, DQS ), These are transmitted/received with data to be used in capturing data at the receiver Differential clock inputs (CK and CK ) Differential data strobes (DQS and DQS ) Commands & addresses entered on both positive and negative CK edges data and data mask referenced to both edges of DQS 8 internal banks for concurrent operation Data mask (DM) for write data Burst Length: 4 (default), 8 or 16 Burst Type: Sequential or Interleave Read & Write latency : Refer to Table 51 LPDDR2 AC Timing Table Auto Precharge option for each burst access Configurable Drive Strength Auto Refresh and Self Refresh Modes Partial Array Self Refresh and Temperature Compensated Self Refresh Deep Power Down Mode HSUL 12 compatible inputs VDD1/VDD2/VDDQ/VDDCA : 1.8V/1.2V/1.2V/1.2V No DLL : CK to DQS is not synchronized Edge aligned data output, center aligned data input Operating Temperature : -30 to 85 C Auto refresh duty cycle : 3.9us Package type : 134-ball FBGA 10x11.5x1.0mm (max) Table 1. Ordering Information Part Number Org Temperature MaxClock (MHz) Package AS4C128M16MD2-25BCN 128Mx16 400 134-ball FBGA Commercial -30C to + 85C 64Mx32 AS4C64M32MD2-25BCN 134-ball FBGA 400 Commercial -30C to + 85C Table 2. Speed Grade Information Speed Grade Clock Frequency tRCD (ns) tRP (ns) RL WL DDR2L-800 18 18 6 400MHz 3 Confidential - 2/129 - Rev.1.0 July 2016

HS Compliance

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:

Alliance Memory may also be referenced as

ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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