2N3766, 2N3767
NPN Power Silicon Transistor
Rev. V4
Features
Available in JAN, JANTX, JANTXV per MIL-PRF-
19500/518
TO-66 Package
Designed for High Speed Switching and High Voltage
Amplifier Applications
o
Electrical Characteristics (25 C unless otherwise specified)
Parameter Test Conditions Symbol Units Min. Max.
Off Characteristics
I = 100 mA dc, 2N3766 60
C
Collector - Emitter Breakdown Voltage V V dc
(BR)CEO
I = 100 mA dc, 2N3767 80
C
VCB = 80 Vdc 2N3766 10
Collector - Base Cutoff Current I A dc
CBO
VCB = 100 V dc 2N3767 10
V = 60 V dc 2N3766
CE
Collector - Emitter Cutoff Current I A dc 500
CEO
V = 80 V dc 2N3767
CE
V = 80 V dc, V = 1.5 Vdc, 2N3766 10
CE BE
Collector - Emitter Cutoff Current I A dc
CEX1
V = 100 Vdc, V = 1.5 Vdc, 2N3767 10
CE BE
o
T = +150 C
A
V = 1.5 V dc 1.0
BE
Collector - Emitter Cutoff Current I mA dc
CEX2
V = 50 V dc, 2N3766 1.0
CE
V = 70 V dc, 2N3767
CE
Emitter - Base Cutoff Current V = 6 V dc I A dc 500
EB EBO
On Characteristics
V = 5 V dc, I = 50 mA dc h 30
CE C FE1
Forward Current Transfer Ratio V = 5 V dc, I = 500 mA dc h - 40 160
CE C FE2
V = 10 V dc, I = 1 A dc h 20
CE C FE3
o
T = -55 C
A
Forward Current Transfer Ratio h - 13
FE4
V = 5.0 V dc, I = 0.5 A dc
CE C
Base - Emitter Voltage (non-saturated) V = 10 V dc, I = 1.0 A dc V V dc 1.5
CE C BE
Collector - Emitter Voltage (saturated) I = 1.0 A dc, I = 0.1 A dc V V dc 2.5
C B CE(SAT)1
Collector - Emitter Voltage (saturated) I = 0.5 A dc, I = 0.05 A dc V V dc 1.0
C B CE(SAT)2
Base - Emitter Voltage (saturated) I = 1.0 A dc, I = 0.1 A dc V V dc 1.5
C B BE(SAT)1
1
11
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
inf o@ v pt com p on en ts. com
1. 2N3766, 2N3767
NPN Power Silicon Transistor
Rev. V4
Dynamic Characteristics
Magnitude of Common Emitter Small-Signal V = 10 V dc, I = 500 mA dc, f = 10
CE C
| h | - 1 8
FE
Short-Circuit Forward Current Transfer Ratio MHz
Open Capacitance (Open Circuit) V = 10 V dc, I = 0, 0.1 MHz f 1 MHz C pF 50
CB E obo
o
Absolute Maximum Ratings (25 C unless otherwise specified)
Ratings Symbol Value
Collector - Emitter Voltage
2N3766 V 60 V dc
CEO
2N3767 80 V dc
Collector - Base Voltage
2N3766 V 80 V dc
CBO
2N3767 100 V dc
Emitter - Base Voltage V 6.0 V dc
EBO
Base Current I 2.0 A dc
B
Collector Current I 4.0 A dc
C
1
Total Power Dissipation @ T = +25C P 25 W
C T
Junction & Storage Temperature Range T , T -65C to +200C
J STG
o o o
1. Between T = +25 C and T = +200 C, linear derating factor (average) = 143m/W C.
C C
Thermal Characteristics
Characteristics Symbol Max. Value
o
Thermal Resistance, Junction to Case R 7.0 C/W
JC
2
22
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
inf o@ v pt com p on en ts. com