Product Information

AQD-D31GN13-SX

AQD-D31GN13-SX electronic component of Advantech

Datasheet
Memory Modules 1G DDR3-1333 128X8 1.5V SAM(G)

Manufacturer: Advantech
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1

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AQD-D31GN13-SX
Advantech

1 : USD 31.122
5 : USD 31.0086
10 : USD 29.862
N/A

Obsolete
     
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240Pin DDR3 1333 UDIMM 1GB Based on 128Mx8 AQD-D31GN13-SX Advantech AQD-D31GN13-SX Datasheet Rev. 1.1 2013-09-24 1 240Pin DDR3 1333 UDIMM 1GB Based on 128Mx8 AQD-D31GN13-SX Description Pin Identification Pin Identification AQD-D31GN13-SX is a DDR3 Unbuffered, non-ECC Symbol Function high-speed, low power memory module that use 8 pcs of 128Mx8bits DDR3 SDRAM in FBGA package and a 2048 A0~A13, BA0~BA2 Address/Bank input bits serial EEPROM on a 240-pin printed circuit board. DQ0~DQ63 Bi-direction data bus. AQD-D31GN13-SX is a Dual In-Line Memory Module and DQS0~DQS7 Data strobes is intended for mounting into 240-pin edge connector /DQS0~/DQS7 Differential Data strobes sockets. CK0, /CK0,CK1, /CK1 Clock Input. (Differential pair) Synchronous design allows precise cycle control with the CKE0, CKE1 Clock Enable Input. use of system clock. Data I/O transactions are possible ODT0, ODT1 On-die termination control line on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be /S0, /S1 DIMM rank select lines. useful for a variety of high bandwidth, high performance /RAS Row address strobe memory system applications. /CAS Column address strobe /WE Write Enable Features DM0~DM7 Data masks/high data strobes RoHS compliant products. VDD Core power supply JEDEC standard 1.5V 0.075V Power supply VDDQ I/O driver power supply VDDQ=1.5V 0.075V Clock Freq: 667MHZ for 1333Mb/s/Pin. V DQ I/O reference supply REF Programmable CAS Latency: 6, 7, 8, 9 Command/address reference V CA REF Programmable Additive Latency (Posted /CAS): supply 0,CL-2 or CL-1 clock V SPD SPD EEPROM power supply DD Programmable /CAS Write Latency (CWL) I2C serial bus address select for = 7(DDR3-1333) SA0~SA2 EEPROM 8 bit pre-fetch SCL I2C serial bus clock for EEPROM Burst Length: 4, 8 SDA I2C serial bus data for EEPROM Bi-directional Differential Data-Strobe Internal calibration through ZQ pin VSS Ground On Die Termination with ODT pin /RESET Set DRAMs Known State Serial presence detect with EEPROM VTT SDRAM I/O termination supply Asynchronous reset NC No Connection 2

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
ADVANTECH CORPORATION
ADVANTECH B+B SMARTWORKS
Advantech Corp

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