e TM ADVANCED EPAD LINEAR DEVICES, INC. ALD212908A/ALD212908 PRECISION N-CHANNEL EPAD MOSFET ARRAY V = +0.08V DUAL HIGH DRIVE MATCHED PAIR GS(th) GENERAL DESCRIPTION FEATURES & BENEFITS The ALD212908A/ALD212908 precision enhancement mode N-Channel EPAD + Precision V = +0.80V 0.010V GS(th) MOSFET array is precision matched at the factory using ALDs proven EPAD V (V match) to 2mV/10mV max. OS GS(th) CMOS technology. These quad monolithic devices are enhanced additions to Sub-threshold voltage (nano-power) operation the ALD212908A/ALD212908 EPAD MOSFET Family, with increased forward < 800mV min. operating voltage transconductance and output conductance, particularly at very low supply volt- < 1nA min. operating current ages. < 1nW min. operating power > 100,000,000:1 operating current ranges Intended for low voltage, low power small signal applications, the ALD212908A/ High transconductance and output conductance ALD212908 features precision threshold voltage, which enables circuit designs Low R of 14 DS(ON) with input/output signals referenced to enhanced operating voltage ranges. With Output current > 50mA these devices, a circuit with multiple cascading stages can be built to operate at Matched and tracked tempco extremely low supply/bias voltage levels. For example, a nanopower input am- Tight lot-to-lot parametric control plifier stage operating at less than 1.0V supply voltage has been successfully Positive, zero, and negative V tempco GS(th) built with these devices. Low input capacitance and leakage currents ALD212908A EPAD MOSFETs feature exceptional matched pair electrical char- + acteristics of Gate Threshold Voltage V set precisely at +0.80V 0.01V, APPLICATIONS GS(th) + I = +20A V = 0.1V, with a typical offset voltage of only 0.001V (1mV). DS DS Low overhead current mirrors and current sources Built on a single monolithic chip, they also exhibit excellent temperature track- Zero Power Normally-On circuits ing characteristics. These precision devices are versatile as design components Energy harvesting circuits for a broad range of analog small signal applications such as basic building Very low voltage analog and digital circuits blocks for current mirrors, matching circuits, current sources, differential ampli- Zero power fail-safe circuits fier input stages, transmission gates, and multiplexers. They also excel in lim- Backup battery circuits & power failure detector ited operating voltage applications, such as very low level voltage-clamps and Extremely low level voltage-clamps nano-power normally-on circuits. Extremely low level zero-crossing detector Matched source followers and buffers In addition to precision matched-pair electrical characteristics, each individual Precision current mirrors and current sources EPAD MOSFET also exhibits well controlled manufacturing characteristics, en- Matched capacitive probes and sensor interfaces abling the user to depend on tight design limits from different production batches. Charge detectors and charge integrators These devices are built for minimum offset voltage and differential thermal re- High gain differential amplifier input stage sponse, and they can be used for switching and amplifying applications in +0.1V + + Matched peak-detectors and level-shifters to +10V ( 0.05V to 5V) powered systems where low input bias current, low Multiple Channel Sample-and-Hold switches input capacitance, and fast switching speed are desired. At V > +0.80V, the GS Precision Current multipliers device exhibits enhancement mode characteristics whereas at V < +0.80V GS Discrete matched analog switches/multiplexers the device operates in the subthreshold voltage region and exhibits conven- Nanopower discrete voltage comparators tional sub threshold characteristics, with well controlled turn-off and sub-thresh- old levels that operate the same as standard enhancement mode MOSFETs. 10 The ALD212908A/ALD212908 features high input impedance (2.5 x 10 ) and PIN CONFIGURATION 8 high DC current gain (>10 ). A sample calculation of the DC current gain at a drain output current of 30mA and input current of 300pA at 25C is 30mA/300pA = 100,000,000, which translates into a dynamic operating current range of about ALD212908 eight orders of magnitude. A series of four graphs titled Forward Transfer Char- nd rd acteristics, with the 2 and 3 sub-titled expanded (subthreshold) and fur- th ther expanded (subthreshold), and the 4 sub-titled low voltage, illustrates the wide dynamic operating range of these devices. - - V V 1 + IC* 8 V Generally it is recommended that the V+ pin be connected to the most positive voltage and the V- and IC (internally-connected) pins to the most negative volt- G 2 7 G N2 N1 age in the system. All other pins must have voltages within these voltage limits M 1 M 2 at all times. Standard ESD protection facilities and handling procedures for static D 3 D 6 N1 N2 sensitive devices are highly recommended when using these devices. - - S 4 V 12 V 5 ORDERING INFORMATION (L suffix denotes lead-free (RoHS)) Operating Temperature Range * 0C to +70C SAL, PAL PACKAGES 8-Pin SOIC Package 8-Pin Plastic Dip Package *IC pins are internally connected, connect to V- ALD212908ASAL ALD212908APAL ALD212908SAL ALD212908PAL *Contact factory for industrial temp. range or user-specified threshold voltage values. 2017 Advanced Linear Devices, Inc., Vers. 1.2 www.aldinc.com 1 of 12 E N A D E L BABSOLUTE MAXIMUM RATINGS Drain-Source voltage, V 10.0V DS Gate-Source voltage, V 10.0V GS Operating Current 80mA Power dissipation 500mW Operating temperature range SAL, PAL 0C to +70C Storage temperature range -65C to +150C Lead temperature, 10 seconds +260C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. OPERATING ELECTRICAL CHARACTERISTICS + - V = +5V V = GND T = 25C unless otherwise specified A ALD212908A ALD212908 Parameter Symbol Min Typ Max Min Typ Max Unit Test Conditions Gate Threshold Voltage V 0.78 0.80 0.82 0.78 0.80 0.82 V I =20A, V = 0.1V GS(th) DS DS Offset Voltage V 12 2 10 mV V - V OS GS(th)M1 GS(th)M2 Offset Voltage Tempco TC 55 V/CV = V VOS DS1 DS2 GateThreshold Voltage Tempco TC -1.7 -1.7 mV/CI = 20A, V = 0.1V VGS(th) D DS 0.0 0.0 I = 760A, V = 0.1V D DS +0.6 +1.6 I = 1.5 mA, V = 0.1V D DS 79 79 mA V = +3.8V, V = +3V On Drain Current I GS DS DS(ON) 85 85 AV = +0.9V, V = +0.1V GS DS Forward Transconductance G 38 38 mmho V = +3.8V FS GS V = +3.0V DS Transconductance Mismatch G 1.8 1.8 % FS Output Conductance G 2.3 2.3 mmho V = +3.8V OS GS V = +3.0V DS Drain Source On Resistance R 14 14 V = +5.8V DS(ON) GS V = +0.1V DS Drain Source On Resistance R 55 K V = +0.8V, V = +0.1V DS(ON) GS DS 1.18 1.18 V = +0.9V, V = +0.1V GS DS Drain Source On Resistance R 1.8 1.8 % V = +5.8V DS(ON) GS Tolerance V = +0.1V DS Drain Source On Resistance R 0.6 0.6 % DS(ON) Mismatch - Drain Source Breakdown BV 10 10 V V = V = -0.2V DSX GS Voltage I = 10A DS 1 Drain Source Leakage Current I 10 400 10 400 pA V = -0.2V, V = +5V DS(OFF) GS DS - V = -5V 44nAT = 125C A 1 Gate Leakage Current I 5 200 5 200 pA V = +5V, V = 0V GSS GS DS 11nAT = 125C A Input Capacitance C 30 30 pF ISS Transfer Reverse Capacitance C 22 pF RSS + Turn-on Delay Time t 10 10 ns V = 5V, R = 5K on L + Turn-off Delay Time t 10 10 ns V = 5V, R = 5K off L Crosstalk 60 60 dB f = 100KHz 1 Notes: Consists of junction leakage currents ALD212908A/ALD212908 Advanced Linear Devices 2 of 12