Product Information

AT25SF041-MHD-T

AT25SF041-MHD-T electronic component of Dialog Semiconductor

Datasheet
NOR Flash 4 Mbit, 3.0V (2.5V to 3.6V), -40 C to 85 C, DFN 5x6 (Tape & Reel), Single, Dual, Quad SPI NOR flash

Manufacturer: Dialog Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

AT25SF041-MHD-T
Dialog Semiconductor

1 : USD 0.4369
10 : USD 0.4129
25 : USD 0.4063
50 : USD 0.3997
100 : USD 0.3931
250 : USD 0.3866
500 : USD 0.3788
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

AT25SF041-MHD-T
Dialog Semiconductor

1 : USD 2.0713
10 : USD 0.7918
25 : USD 0.7508
100 : USD 0.6669
N/A

Obsolete
0 - Global Stock

MOQ : 16
Multiples : 1

Stock Image

AT25SF041-MHD-T
Dialog Semiconductor

16 : USD 0.4301
25 : USD 0.4063
50 : USD 0.3997
100 : USD 0.3931
250 : USD 0.3866
500 : USD 0.3788
N/A

Obsolete
     
Manufacturer
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Mounting Style
Series
Memory Size
Maximum Clock Frequency
Interface Type
Organisation
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Minimum Operating Temperature
Maximum Operating Temperature
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Hts Code
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Following the acquisi on of Adesto Technologies, Dialog Semiconductor o ers memory products as part of its product porolio. The exis ng content from datasheets, including part numbers and codes should be used. Terms of Purchase are provided on the Dialog website AT25SF041 4-Mbit, 2.5V Minimum SPI Serial Flash Memory with Dual-I/O and Quad-I/O Support Features Not recommended for Single 2.5V - 3.6V Supply new designs. Use Serial Peripheral Interface (SPI) Compatible AT25SF041B. Supports SPI Modes 0 and 3 Supports Dual and Quad Output Read 104MHz Maximum Operating Frequency Clock-to-Output (t ) of 6 ns V Flexible, Optimized Erase Architecture for Code + Data Storage Applications Uniform 4-Kbyte Block Erase Uniform 32-Kbyte Block Erase Uniform 64-Kbyte Block Erase Full Chip Erase Hardware Controlled Locking of Protected Blocks via WP Pin 3 Protected Programmable Security Register Pages Flexible Programming Byte/Page Program (1 to 256 Bytes) Fast Program and Erase Times 0.7ms Typical Page Program (256 Bytes) Time 70ms Typical 4-Kbyte Block Erase Time 300ms Typical 32-Kbyte Block Erase Time 600ms Typical 64-Kbyte Block Erase Time JEDEC Standard Manufacturer and Device ID Read Methodology Low Power Dissipation 2A Deep Power-Down Current (Typical) 10A Standby current (Typical) 4mA Active Read Current (Typical) Endurance: 100,000 Program/Erase Cycles Data Retention: 20 Years Complies with Full Industrial Temperature Range Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options 8-lead SOIC (150-mil and 208-mil) 8-pad Ultra Thin DFN (5 x 6 x 0.6 mm and 2 x 3 x 0.6 mm) 8-lead TSSOP (4 x 4 mm) Die in Wafer Form DS-25SF041044I8/2020

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
ADESTO
Adesto Technologies
Dialog Semiconductor GmbH
DLG
Echelon / Adesto
Echelon Corporation

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