S-5743NBH1A-M3T4U

S-5743 A Series 125C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED www.ablic.com BIPOLAR HALL EFFECT LATCH IC ABLIC Inc., 2015-2019 Rev.1.4 00 This IC, developed by CMOS technology, is a high-accuracy hall effect latch IC that operates with high temperature and high-withstand voltage. The output voltage changes when this IC detects the intensity level of magnetic flux density and a polarity change. Using this IC with a magnet makes it possible to detect the rotation status in various devices. This IC includes an output current limit circuit. High-density mounting is possible by using the small SOT-23-3S package. Due to its high-accuracy magnetic characteristics, this IC enables the user to reduce the operational variation in the system. ABLIC Inc. offers amagnetic simulation servic that provides the ideal combination of magnets and our Hall effect ICs for customer systems. Our magnetic simulation service will reduce prototype production, development period and development costs. In addition, it will contribute to optimization of parts to realize high cost performance. For more information regarding our magnetic simulation service, contact our sales office. Features Pole detection: Bipolar latch *1 Output logic : VOUT = at S pole detection VOUT = at S pole detection Output form: Nch open-drain output *1 Magnetic sensitivity : BOP = 0.5 mT typ. BOP = 1.5 mT typ. BOP = 2.2 mT typ. BOP = 3.0 mT typ. Chopping frequency: fC = 500 kHz typ. Output delay time: tD = 8.0 s typ. Power supply voltage range: VDD = 2.7 V to 26.0 V Built-in regulator Built-in output current limit circuit Operation temperature range: Ta = 40C to +125C Lead-free (Sn 100%), halogen-free *1. The option can be selected. Applications Power tool Home appliance DC brushless motor Housing equipment Industrial equipment Package SOT-23-3S 1 125C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC S-5743 A Series Rev.1.4 00 Block Diagram VDD OUT Regulator *1 Chopping stabilized amplifier Output current limit circuit VSS *1. Parasitic diode Figure 1 2