RF JFET Transistors

RF JFET transistors, also known as Radio Frequency Junction Field Effect Transistors, are transistors designed to be used in high frequency applications like radio and other types of broadcasting. They are commonly used in signal amplification, signal modulation, and as oscillators to generate RF signal. RF JFET transistors have a much higher frequency range than regular field effect transistors (FETs) and are particularly useful in applications where a high-power signal is needed. They are also more efficient and have lower noise levels than other types of transistors. In addition, the construction of a RF JFET transistor is simpler and cheaper than a FET, making them a much more cost effective solution for many RF applications.

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Enter Qty Transistor TypeTechnologyOperating FrequencyGainTransistor PolarityVds - Drain-Source Breakdown VoltageVgs - Gate-Source Breakdown VoltageId - Continuous Drain CurrentOutput PowerMaximum Drain Gate VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackaging
  
                    
CGHV22200-TB


EVAL BOARD FOR CGHV22200
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USD 641.3879

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CGHV27100-TB


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USD 693

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CGHV22100-TB


EVAL BOARD FOR CGHV22100
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USD 693

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T1G2028536-FL


RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN
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USD 849.9358

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HemtGan Sic2 GHz20.8 DbN - Channel36 V145 V24 A260 W48 V + 275 C288 WSmd/Smt Tray
T1G2028536-FS


RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN
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USD 850.1121

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HemtGan Sic2 GHz18 DbN - Channel36 V145 V24 A260 W48 V + 250 C288 WSmd/Smt Tray
QPD1016


RF JFET Transistors 500W 50V 1.2-1.4 GHz GaN Transistor
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USD 860.1

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QPD1003


RF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN
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USD 993.825

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HemtGan Sic1.2 GHz to 1.4 GHz19.9 DbN - Channel50 V145 V15 A540 W - 40 C+ 85 C370 WSmd/SmtRF - 565Tray
QPD1025L


RF JFET Transistors 1-1.1GHz 1500 Watt Gain 22.9dB 65V
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USD 1251.25

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HemtGan Sic1 GHz to 1.1 GHz22.9 Db   28 A1.5 kW225 V- 40 C+ 85 C758 WSmd/SmtNI - 1230 - 4Tray
QPD1029L


RF JFET Transistors 1500W 65V Pre-matched 1.2-1.4GHz Fla
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USD 1251.25

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MAGX-000912-250L00


Trans JFET 14.2A GaN HEMT 3-Pin
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MACOM 0
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USD 1347.1919

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HemtGan Sic0.96 GHz to 1.2 GHz18.6 DbN - Channel175 V- 8 V8.6 A250 W - 40 C+ 95 C460 WSmd/SmtFLANGE CERAMIC - 2Tray
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