10 9 8 7 6 5 SiC Power Module BSM180C12P3C202 Datasheet Application Circuit diagram 1 Motor drive Converter 10(N. C) Photovoltaics, wind power generation. 9 8( N.C) 3, 4 5 6 7( N.C) 2 Features *Do not connect anything to NC pin. 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Construction This product is a chopper module consisting of SiC-UMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) 4 1 2 3 (M2.6 FOR SELF- TAPPING www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.F 1/10Datasheet BSM180C12P3C202 Absolute maximum ratings (T = 25C) j Parameter Conditions Limit Symbol Unit Drain-source voltage V G-S short 1200 DSS V 1200 Repetitive reverse voltage Clamp diode DSS Gate-source voltage() 22 V V GSS D-S short Gate-source voltage() 4 G - S Voltage (t <300nsec) V -4 to 26 surge GSSsurge I DC (T =60C) 180 D c 1 Drain current * 2 I 360 DRM Pulse (T =60C) 1ms * c I DC (T =60C ) V =18V 180 S c GS 1 2 I Pulse (Tc=60C) 1ms V =18V * 360 A Source current * SRM GS 2 I 360 Pulse (Tc=60C) 10 s V =0V * SRM GS I DC (T =60C ) V =18V 180 Forward curent F c GS 1 2 (clamp diode) * I 360 Pulse (Tc=60C) 1ms V =18V * FRM GS 3 T =25C 880 Ptot W Total power disspation * c Max Junction Temperature T 175 jmax Junction temperature T C 40 to150 jop Storage temperature T 40 to125 stg Terminals to baseplate, Isolation voltage Visol 2500 Vrms f=60Hz AC 1min. 4.5 Main Terminals : M6 screw Mounting torque N m Mounting to heat shink : M5 screw 3.5 (*1) Case temperature (T )is defined on the surface of base plate just under the chips. c (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T j max. (*3) T is less than 175C j Example of acceptable VGS waveform Waveform for switching test Eon =IdVds Eoff=IdVds trr +26V Vs urge t surge V DS 90% 90% +22V 10% 10% 10% 2% 2% 2% 2% ID 90% 10% V GS -4V td(off) td(on) tr tf www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.F 2/10