SiC Power Module Datasheet BSM250D17P2E004 Application Circuit diagram Motor drive 1 7 Inverter, Converter Photovoltaics, wind power generation. 9 8 Induction heating equipment. 3,4 Features 6 5 1) Low surge, low switching loss. 2 10 2) High-speed switching possible. NTC 11 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) www.rohm.com 19.Oct.2018 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. 1/10 BSM250D17P2E004 Datasheet Absolute maximum ratings (T = 25C) j Parameter Symbol Conditions Ratings Unit V G-S short 1700 Drain - Source Voltage DSS V D-S short 22 Gate - Source Voltage (+) GSS V V Gate - Source Voltage (-) D-S short -6 GSS V G - S Voltage (t <300nsec) D-S short -10 to 26 GSSsurge surge I DC(Tc=60C) VGS=18V 250 D Drain Current Note 1) I Pulse (Tc = 60C 1ms VGS=18V DRM Note 2) 500 I DC(Tc=60C) VGS=18V 250 A S I Source Current DC(Tc=60C) VGS=0V 200 S Note 1) I Pulse (Tc = 60C 1ms VGS=18V 500 SRM Note 2) Total Power Dissipation Ptot Tc = 25C 1800 W Note 3) Tjmax Max Junction Temperature 175 Tjop Junction Temperature -40 to 150 C Tstg -40 to 125 Storage Temperature Visol Terminals to baseplate f = 60Hz AC 1 min. 3400 Vrms Isolation Voltage Main Terminals : M6 screw 4.5 - N m Mounting Torque Mounting to heat sink M5 screw 3.5 Note 1) Case temperature (Tc) is defined on the surface of base plate just under the chips. Note 2) Repetition rate should be kept within the range where temperature rise if die should not exceed Tjmax. Note 3) Tj is less than 175C. Example of acceptable VGS waveform +26V +22V 0V -6V -10V www.rohm.com 19.Oct.2018 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. 2/10