Product Information

NSVF3007SG3T1G

NSVF3007SG3T1G electronic component of ON Semiconductor

Datasheet
RF Bipolar Transistors RF-TR 12V 30MA FT=8G NPN

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

33: USD 0.2226 ea
Line Total: USD 7.35

5673 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 33  Multiples: 1
Pack Size: 1
Availability Price Quantity
5 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

NSVF3007SG3T1G
ON Semiconductor

1 : USD 0.2667

5673 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

NSVF3007SG3T1G
ON Semiconductor

1 : USD 0.2226

45 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 1
Multiples : 1

Stock Image

NSVF3007SG3T1G
ON Semiconductor

1 : USD 2.0597
10 : USD 1.7569
30 : USD 1.5894
100 : USD 1.4004
500 : USD 1.2565
1000 : USD 1.2179

2885 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

NSVF3007SG3T1G
ON Semiconductor

1 : USD 0.3898
10 : USD 0.3657
100 : USD 0.3531
3000 : USD 0.322

5673 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 33
Multiples : 1

Stock Image

NSVF3007SG3T1G
ON Semiconductor

33 : USD 0.2226

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Qualification
Brand
Maximum Dc Collector Current
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
NSVF4020SG4T1G electronic component of ON Semiconductor NSVF4020SG4T1G

RF Bipolar Transistors BIP NPN 150MA 8V FT=16G
Stock : 4043

NSVF6003SB6T1G electronic component of ON Semiconductor NSVF6003SB6T1G

RF Bipolar Transistors BIP NPN 0.15A 12V FT=7G
Stock : 2814

NSVF4009SG4T1G electronic component of ON Semiconductor NSVF4009SG4T1G

RF Bipolar Transistors BIP NPN 40MA 3.5V FT=25G
Stock : 3000

NSVJ2394SA3T1G electronic component of ON Semiconductor NSVJ2394SA3T1G

JFET NCH J-FET
Stock : 4692

NSVIMD10AMT1G electronic component of ON Semiconductor NSVIMD10AMT1G

Bipolar Transistors - Pre-Biased SURF MT BIASED RES XSTR
Stock : 3000

NSVF4017SG4T1G electronic component of ON Semiconductor NSVF4017SG4T1G

RF Bipolar Transistors BIP NPN 100MA 12V FT=10G
Stock : 23995

NSVF4015SG4T1G electronic component of ON Semiconductor NSVF4015SG4T1G

RF Bipolar Transistors BIP NPN 100MA 12V FT=10G
Stock : 8536

NSVF5501SKT3G electronic component of ON Semiconductor NSVF5501SKT3G

RF Bipolar Transistors RF-TR 10V 70MA FT=5 .5GHZ
Stock : 6917

NSVF5488SKT3G electronic component of ON Semiconductor NSVF5488SKT3G

RF Bipolar Transistors BIP NPN 70MA 10V F
Stock : 9548

NSVF5490SKT3G electronic component of ON Semiconductor NSVF5490SKT3G

RF Bipolar Transistors RF-TR 10V 30MA FT
Stock : 3063

Image Description
BFT92.215 electronic component of NXP BFT92.215

Transistor: PNP; bipolar; 15V; 25mA; 300mW; SOT23
Stock : 0

BFR93A,215* electronic component of NXP BFR93A,215*

Trans GP BJT NPN 12V 0.035A 3-Pin TO-236AB T/R
Stock : 0

NSVF4009SG4T1G electronic component of ON Semiconductor NSVF4009SG4T1G

RF Bipolar Transistors BIP NPN 40MA 3.5V FT=25G
Stock : 3000

PH2729-130M electronic component of MACOM PH2729-130M

RF Bipolar Transistors
Stock : 0

BFP 420 H6433 electronic component of Infineon BFP 420 H6433

RF Bipolar Transistors RF BIP TRANSISTOR
Stock : 8799

BFP 420 H6740 electronic component of Infineon BFP 420 H6740

RF Bipolar Transistors RF BIP TRANSISTOR
Stock : 2970

PH1090-175L electronic component of MACOM PH1090-175L

RF Bipolar Transistors
Stock : 0

BFU530AVL electronic component of NXP BFU530AVL

RF Bipolar Transistors NPN wideband silicon RF transistor
Stock : 7975

BFP 420 H6801 electronic component of Infineon BFP 420 H6801

RF Bipolar Transistors RF BIP TRANSISTOR
Stock : 8970

MT3S111P(TE12L,F) electronic component of Toshiba MT3S111P(TE12L,F)

RF Bipolar Transistors RF Bipolar Transistor .1A 1W
Stock : 0

ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NSVF3007SG3 RF Transistor for Low Noise Amplifier This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it www.onsemi.com has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. 12 V, 30 mA Features f = 8 GHz typ. T Low-noise use : NF = 1.2 dB typ. (f = 1 GHz) RF Transistor High cut-off frequency : f = 8 GHz typ. (V = 5 V) T CE 2 High gain : S21e = 12 dB typ. (f = 1 GHz) AEC-Q101 qualified and PPAP capable ELECTRICAL CONNECTION MCPH3 package is pin-compatible with SC-70FL NPN Pb-Free, Halogen Free and RoHS compliance 3 Typical Applications Low Noise Amplifier for FM Radio 1 Low Noise Amplifier for RKE RF Amplifier for ADAS 1 : Base 2 : Emitter 3 : Collector 2 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter Symbol Value Unit MARKING Collector to Base Voltage V 20 V CBO 3 Collector to Emitter Voltage V 12 V CEO Emitter to Base Voltage V 2 V EBO 1 Collector Current I 30 mA C 2 Collector Dissipation P 350 mW MCPH3 C Operating Junction and Tj, Tstg 55 to +150 C Storage Temperature ORDERING INFORMATION Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage See detailed ordering and shipping the device. If any of these limits are exceeded, device functionality should not information on page 10 of this data sheet. be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number : May 2017 - Rev. 0 NSVF3007SG3/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted