Product Information

BFR93A,215*

BFR93A,215* electronic component of NXP

Datasheet
Trans GP BJT NPN 12V 0.035A 3-Pin TO-236AB T/R

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
BFR94A,215 electronic component of NXP BFR94A,215

Trans RF BJT NPN 15V 0.025A Automotive 3-Pin TO-236AB T/R
Stock : 0

BFR93AW,115 electronic component of NXP BFR93AW,115

Transistors RF Bipolar TAPE-7 TNS-RFSS
Stock : 0

BFS17,215 electronic component of NXP BFS17,215

RF Bipolar Transistors NPN 25MA 15V 1GHZ
Stock : 0

BFS17A electronic component of NXP BFS17A

RF Bipolar Transistors NPN 3 GHz wideband transistor
Stock : 0

BFS19,215 electronic component of Nexperia BFS19,215

Bipolar (BJT) Transistor NPN 20 V 30 mA 260MHz 250 mW Surface Mount TO-236AB
Stock : 895

BFS17A,215 electronic component of NXP BFS17A,215

Trans GP BJT NPN 15V 0.025A 3-Pin TO-236AB TR
Stock : 5500

BFS17W,115 electronic component of NXP BFS17W,115

RF Bipolar Transistors NPN 15V 1GHZ
Stock : 0

BFS19,235 electronic component of NXP BFS19,235

RF Bipolar Transistors TRANS MED FREQ
Stock : 0

BFS20,215 electronic component of Nexperia BFS20,215

RF Bipolar Transistors TRANS MED FREQ
Stock : 9464

BFS20 electronic component of Nexperia BFS20

TRANSISTOR, NPN, SOT-23
Stock : 0

Image Description
NSVF4009SG4T1G electronic component of ON Semiconductor NSVF4009SG4T1G

RF Bipolar Transistors BIP NPN 40MA 3.5V FT=25G
Stock : 3000

PH2729-130M electronic component of MACOM PH2729-130M

RF Bipolar Transistors
Stock : 0

BFP 420 H6433 electronic component of Infineon BFP 420 H6433

RF Bipolar Transistors RF BIP TRANSISTOR
Stock : 8799

BFP 420 H6740 electronic component of Infineon BFP 420 H6740

RF Bipolar Transistors RF BIP TRANSISTOR
Stock : 2970

PH1090-175L electronic component of MACOM PH1090-175L

RF Bipolar Transistors
Stock : 0

BFU530AVL electronic component of NXP BFU530AVL

RF Bipolar Transistors NPN wideband silicon RF transistor
Stock : 7975

BFP 420 H6801 electronic component of Infineon BFP 420 H6801

RF Bipolar Transistors RF BIP TRANSISTOR
Stock : 8970

MT3S111P(TE12L,F) electronic component of Toshiba MT3S111P(TE12L,F)

RF Bipolar Transistors RF Bipolar Transistor .1A 1W
Stock : 0

2SC5086-Y,LF electronic component of Toshiba 2SC5086-Y,LF

RF Bipolar Transistors Radio-Frequency Bipolar Transistor
Stock : 0

DSC5G02D0L electronic component of Panasonic DSC5G02D0L

RF Bipolar Transistors Small Sig Transistor 2.0x2.1mm Flat lead
Stock : 0

DISCRETE SEMICONDUCTORS DATA SHEET BFR93A NPN 6 GHz wideband transistor Product specification 1997 Oct 29 Supersedes data of September 1995NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A FEATURES DESCRIPTION High power gain NPN wideband transistor in a plastic lfpage 3 SOT23 package. Low noise figure PNP complement: BFT93. Very low intermodulation distortion. PINNING 12 APPLICATIONS Top view MSB003 PIN DESCRIPTION RF wideband amplifiers and Marking code: R2p. oscillators. 1base 2emitter Fig.1 SOT23. 3 collector QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V collector-base voltage open emitter 15 V CBO V collector-emitter voltage open base 12 V CEO I collector current (DC) 35 mA C P total power dissipation T 95 C 300 mW tot s C feedback capacitance I =0 V =5V f= 1MHz 0.6 pF re C CE f transition frequency I =30mA V =5V f= 500MHz 6 GHz T C CE G maximum unilateral power gain I =30mA V =8V f= 1GHz T =25 C13 dB UM C CE amb I =30mA V =8V f= 2GHz T =25 C7 dB C CE amb F noise figure I =5mA V =8V f= 1GHz = 1.9 dB C CE s opt T =25 C amb V output voltage d = 60 dB I =30mA V =8V 425 mV O im C CE R =75 T =25 C L amb f +f f = 793.25 MHz p q r LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 15 V CBO collector-emitter voltage open base 12 V V CEO V emitter-base voltage open collector 2V EBO I collector current (DC) 35 mA C P total power dissipation T 95 C note 1 300 mW tot s T storage temperature 65 +150 C stg T junction temperature +175 C j Note 1. T is the temperature at the soldering point of the collector pin. s 1997 Oct 29 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted