Product Information

MMBFU310LT1G

MMBFU310LT1G electronic component of ON Semiconductor

Datasheet
SOT-23 JFETs ROHS
Gunn diode transimpedance amplifier optimized for use with photodiodes.

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

71: USD 0.1924 ea
Line Total: USD 13.66

8308 - Global Stock
Ships to you between
Mon. 06 May to Fri. 10 May
MOQ: 71  Multiples: 1
Pack Size: 1
Availability Price Quantity
184 - Warehouse 1


Ships to you between
Mon. 13 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

MMBFU310LT1G
ON Semiconductor

1 : USD 0.6546
10 : USD 0.5397
30 : USD 0.4914
100 : USD 0.431
500 : USD 0.4028
1000 : USD 0.3444

7 - Warehouse 2


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 3
Multiples : 1

Stock Image

MMBFU310LT1G
ON Semiconductor

3 : USD 0.4459
25 : USD 0.3328
69 : USD 0.2366
188 : USD 0.2236
3000 : USD 0.2145

8308 - Warehouse 3


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 71
Multiples : 1

Stock Image

MMBFU310LT1G
ON Semiconductor

71 : USD 0.1924
100 : USD 0.1249
250 : USD 0.1159
500 : USD 0.1043
1000 : USD 0.1021

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Configuration
Mounting Style
Package / Case
Packaging
Series
Drain Source Voltage Vds
Brand
Drain-Source Current At Vgs 0
Gate-Source Breakdown Voltage
Factory Pack Quantity :
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MMBFU310LT1G is an N-Channel enhancement mode Field-Effect Transistor (FET) manufactured by ON Semiconductor. It has a maximum drain-source voltage of -55 volts, a maximum drain current of -3 amps, and a maximum gate-source voltage of ±20 volts. It is typically used as a switch and has a maximum operating temperature of +175 °C. The transistor is encapsulated in a D-PAK surface-mount package and is ideal for automated assembly processes.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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