Product Information

MMBFJ309LT1G

MMBFJ309LT1G electronic component of ON Semiconductor

Datasheet
SOT-23 JFETs ROHS
N-channel J-FET transistor with low-noise and high input impedance.

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0963 ea
Line Total: USD 288.9

5820 - Global Stock
Ships to you between
Mon. 06 May to Fri. 10 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
5820 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 3000
Multiples : 3000

Stock Image

MMBFJ309LT1G
ON Semiconductor

3000 : USD 0.0963
9000 : USD 0.0944
24000 : USD 0.0944
45000 : USD 0.0944

362 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1

Stock Image

MMBFJ309LT1G
ON Semiconductor

1 : USD 0.1487
10 : USD 0.1186
25 : USD 0.1162
100 : USD 0.1162
250 : USD 0.1162

12493 - Global Stock


Ships to you between
Mon. 13 May to Thu. 16 May

MOQ : 5
Multiples : 5

Stock Image

MMBFJ309LT1G
ON Semiconductor

5 : USD 0.2137
50 : USD 0.1702
150 : USD 0.1515
500 : USD 0.1283
3000 : USD 0.1179
6000 : USD 0.1116

362 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 71
Multiples : 1

Stock Image

MMBFJ309LT1G
ON Semiconductor

71 : USD 0.1162

5820 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 3000
Multiples : 3000

Stock Image

MMBFJ309LT1G
ON Semiconductor

3000 : USD 0.0963
9000 : USD 0.0944

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Configuration
Mounting Style
Package / Case
Packaging
Series
Type
Brand
Drain-Source Current At Vgs 0
Cnhts
Hts Code
Mxhts
Factory Pack Quantity :
Taric
Category
Brand Category
LoadingGif

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The MMBFJ309LT1G is a N-Channel Junction Field Effect Transistor (JFET) produced by ON Semiconductor. It is designed for a wide range of general-purpose applications, such as amplifiers and switches, and it is a low cost, low noise device. This device has a drain–source voltage (Vds) of 30V, a drain–source on resistance (Rds on) of 1.8O (max) at Vgs = 0V, and a gate–source voltage (Vgs) (max) of ±30V. It also features fast switching speeds and is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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