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PMDPB56XN,115

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NXP Semiconductors MOSFET 20V, N-Channel Trench MOSFET

Manufacturer: NXP

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 MOQ : 1 Multiples : 1 PMDPB56XN,115 NXP	1 : USD 0.79 10 : USD 0.6355 100 : USD 0.4103 1000 : USD 0.3285 2000 : USD 0.2772 3000 : USD 0.2675 9000 : USD 0.2661 24000 : USD 0.2509 48000 : USD 0.246		N/A Obsolete

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Additional Infomation About Product

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PMDPB56XN 30 V, dual N-channel Trench MOSFET Rev. 1 16 May 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Trench MOSFET technology Exposed drain pad for excellent thermal conduction 1.3 Applications Charging switch for portable devices Power management in battery-driven portables DC-to-DC converters Hard disc and computing power Small brushless DC motor drive management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T=25C --30 V DS j V gate-source voltage -12 - 12 V GS 1 I drain current V =4.5 V T =25C t 5 s --4 A D GS amb Static characteristics (per transistor) R drain-source on-state V =4.5 V I = 3.1 A T = 25 C - 55 73 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . DFN2020-6

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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Manufacturer NXP NXP
Product Category MOSFET MOSFET
Id - Continuous Drain Current 4 A 4 A
Vds - Drain-Source Breakdown Voltage 30 V 30 V
Rds On - Drain-Source Resistance 55 mOhms 55 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 1 V 1 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 8.33 W 8.33 W
Mounting Style Smd/Smt Smd/Smt
Package / Case DFN - 2020 - 6 DFN - 2020 - 6
Packaging Reel Reel
Qg - Gate Charge 1.9 nC 1.9 nC
Channel Mode Enhancement Enhancement
Configuration Dual Dual
Brand Nxp Semiconductors Nxp Semiconductors
Fall Time 11 ns 11 ns
Rise Time 17 ns 17 ns
Factory Pack Quantity : 3000 3000
Typical Turn-Off Delay Time 12 ns 12 ns
Typical Turn-On Delay Time 8 ns 8 ns