PMDPB58UPE Nexperia

PMDPB58UPE 20 V dual P-channel Trench MOSFET Rev. 1 19 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fast switching 2 kV ElectroStatic Discharge (ESD) protection 1.3 Applications Relay driver High-side load switch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T=25C ---20 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =-4.5V T =25C t 5 s ---4.5 A D GS amb Static characteristics (per transistor) R drain-source on-state V =-4.5V I =-2 A T = 25 C - 58 67 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . DFN2020-6PMDPB58UPE NXP Semiconductors 20 V dual P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 D1 D2 6 54 2 G1 gate TR1 3D2 drain TR2 78 G1 G2 4S2 source TR2 5 G2 gate TR2 123 6D1 drain TR1 Transparent top view S1 S2 7D1 drain TR1 017aaa260 DFN2020-6 (SOT1118) 8D2 drain TR2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDPB58UPE DFN2020-6 plastic thermal enhanced ultra thin small outline package no SOT1118 leads 6 terminals 4. Marking Table 4. Marking codes Type number Marking code PMDPB58UPE 2A 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V drain-source voltage T =25C - -20 V DS j V gate-source voltage -8 8 V GS 1 I drain current V =-4.5 V T =25C t 5 s --4.5 A D GS amb 1 V =-4.5 V T =25C --3.6 A GS amb 1 V =-4.5 V T =100 C --2.3 A GS amb I peak drain current T = 25 C single pulse t 10 s - -14.4 A DM amb p 2 P total power dissipation T =25C - 515 mW tot amb 1 - 1210 mW T = 25 C - 8330 mW sp Source-drain diode 1 I source current T =25C --1.3 A S amb PMDPB58UPE All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 19 June 2012 2 of 15