PMBFJ109,215

PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 P-channel silicon field-effect transistors Rev. 3.0 24 January 2020 Product data sheet 1 Product profile 1.1 General description Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections. 1.2 Quick reference data Table 1.Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 30 - 30 V DS V gate-source voltage - - 30 V GSo -I gate current - - 50 mA G P total power up to T = 25 C - - 300 mW tot amb dissipation -I drain current -V = 15 V V = 0 DSS DS GS PMBFJ174 20 - 135 mA PMBFJ175 7 - 70 mA PMBFJ176 2 - 35 mA PMBFJ177 1.5 - 20 mA R drain-source ON- -V = 0.1 V V = 0 DS on DS GS resistance PMBFJ174 - - 85 PMBFJ175 - - 125 PMBFJ176 - - 250 PMBFJ177 - - 300 NXP Semiconductors PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 P-channel silicon field-effect transistors 2 Pinning information Table 2.Pinning 1 Pin Description Simplified outline Symbol 1 drain 3 1 2 source 3 2 sym053 3 gate 1 2 1 Drain and source are interchangeable. 3 Ordering information Table 3.Ordering information Type number Package Name Description Version PMBFJ174 - plastic surface mounted package 3 leads SOT23 PMBFJ175 PMBFJ176 PMBFJ177 4 Marking Table 4.Marking 1 Type number Marking code PMBFJ174 *6X PMBFJ175 *6W PMBFJ176 *6S PMBFJ177 *6Y 1 * = manufacturing site 5 Limiting values Table 5.Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 30 30 V DS V gate-source voltage - 30 V GSO V gate-drain voltage - 30 V GDO PMBFJ174 175 176 177 All information provided in this document is subject to legal disclaimers. NXP B.V. 2020. All rights reserved. Product data sheet Rev. 3.0 24 January 2020 2 / 10