Product Information

CFB0301-000T

CFB0301-000T electronic component of MACOM

Datasheet
Trans JFET 8V 180mA GaAs 4-Pin SMD

Manufacturer: MACOM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 9.0214 ea
Line Total: USD 9021.4

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1000
Multiples : 1000
1000 : USD 9.0214

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Brand
Gate-Source Voltage Max
Package Type
Pin Count
Operating Temperature Classification
Drain-Source Volt Max
Configuration
Rad Hardened
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High Dynamic Range Low Noise GaAs FET August 2006 - Rev 03-Aug-06 CFB0301 Features Low-Noise Figure from 0.8 to 2.0 GHz High Gain High Intercept Point Highly Stable Easily Matched to 50 70 mil Package Applications Cellular Base Stations PCS Base Stations Industrial Data Networks Description Celeriteks CFB0301 is a high performance GaAs base station receiver in PCS, Japanese PHS, AMPS, GSM and MESFET with 600 m gate width and 0.25 m gate length. other communications systems. The CFB0301 is in an indus- The low noise figure and high intercept point of this device try-standard 70 mil package. It is surface mountable and makes it well suited for use as the low-noise amplifier of the available in tape and reel. Electrical Specifications (TA = 25C, 2 GHz) Standard 4 Parameters Conditions Min Typ Deviation Max Units V = 2V, I = 25 mA d d 2 Noise Figure 0.6 dB 2 Associated Gain Noise Figure 16 dB 1, 3 P P 15.0 dBm out -1 3 IP +5 dBm P /Tone 24 dBm 3 OUT 3 I P 35 mA d -1 V = 4V, I = 30 mA d d 2 Noise Figure 0.7 dB 2 Associated Gain Noise Figure 17 dB 1, 3 P P 20.5 dBm out -1 3 IP +5 dBm P /Tone 30 dBm 3 OUT 3 I P 56 mA d -1 V = 4V, I = 70 mA d d 2 Noise Figure 0.8 0.08 0.9 dB 2 Associated Gain Noise Figure 16 17 0.4 dB 1, 3 P P 20 21 0.4 dBm out -1 3 IP +5 dBm P /Tone 32 34 0.9 dBm 3 OUT 3 I P 77 mA d -1 Transconductance V = 2 V, V = 0 V 70 140 mho ds gs Saturated Drain Current V = 2 V, V = 0 V 120 150 180 mA ds gs Pinchoff Voltages V = 2 V, I = 1 mA -2.5 -1.3 -0.5 V ds ds Thermal Resistance T = 150C liquid crystal test 200 C/W case Notes: 4. Standard deviation based on 10 wafers randomly selected 1. T = 25C. Derate 5 mW/C for T >25C. case case and is provided as an estimate of the distribution only. 2. Input matched for low noise. Trademarks are the property of their respected owners. 3. Matched for power transfer. Page 1 of 3 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. 2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.High Dynamic Range Low Noise GaAs FET August 2006 - Rev 03-Aug-06 CFB0301 Typical Noise Parameters (V = 4 V, I = 30 mA) Absolute Maximum Ratings ds ds Parameter Symbol Rating 1 Frequency F Gamma Opt min (GHz) (dB) Mag Ang Rn/50 Drain-Source Voltage V +8V ds Gate-Source Voltage V -5V gs 0.8 0.4 0.6 27 0.19 Drain Current I Idss ds 1.0 0.4 0.6 29 0.17 1 Continuous Dissipation Pt 750 mW 1.2 0.4 0.6 32 0.18 Channel Temperature Tch 175C 1.4 0.4 0.6 35 0.18 Storage Temperature Tstg -65C to +150C 1.6 0.4 0.5 38 0.17 1.8 0.4 0.5 41 0.16 2.0 0.5 0.5 45 0.15 2.2 0.5 0.5 49 0.15 2.4 0.5 0.5 54 0.14 2.6 0.5 0.5 60 0.13 Note: 1. Fmin values reflect the circuit losses in the test fixture when matched to optimum noise figure. Typical Performance Optimum Noise Figure and Associated Gain Associated Gain vs I ds vs Frequency V = 2V, I = 25 mA ds ds V = 2V, Frequency = 2 GHz ds 2.5 25 25 2.0 20 20 Associated Gain 1.5 15 15 1.0 10 10 Noise Figure 0.5 5 5 0 0 0 24 6 810 12 10 20 30 40 50 60 70 Frequency (GHz) I (mA) ds Optimum Noise Figure vs I & V ds ds Frequency = 2 GHz 2.5 2.0 1.5 1.0 4V 0.5 2V 0.0 10 20 30 40 50 60 70 I (mA) ds Typical Scattering Parameters (TA = 25C, V = 2 V, I = 25 mA) DS DS S S S S Frequency 11 21 12 22 (GHz) Mag Ang Mag (dB) Ang MAG (dB) ANG MAG ANG 0.5 0.98 -20 7.17 161 0.02 78 0.42 -11 1.0 0.94 -40 6.90 148 0.03 70 0.41 -24 2.0 0.85 -76 6.00 119 0.05 52 0.36 -46 3.0 0.76 -108 5.00 95 0.07 38 0.32 -65 4.0 0.70 -130 4.30 75 0.08 30 0.30 -75 5.0 0.64 -150 3.83 55 0.09 20 0.27 -85 Page 2 of 3 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. 2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. Noise Figure (dB) Noise Figure (dB) Associated Gain (dB) Gain (dB)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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