Product Information

BLF6G10-45,112

BLF6G10-45,112 electronic component of NXP

Datasheet
NXP Semiconductors RF MOSFET Transistors LDMOS TNS
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 57.3042
2 : USD 56.0221
5 : USD 55.5717
10 : USD 53.8322
25 : USD 53.1878
50 : USD 53.1878
100 : USD 53.1878
250 : USD 53.1878
500 : USD 49.099
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Configuration
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Type
Brand
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Height
Length
Width
Channel Mode
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

More Products By Manufacturer "NXP"

Image Description
BLF7G21LS-160P,112 electronic component of NXP BLF7G21LS-160P,112

RF MOSFET Transistors Power LDMOS transistor
Stock : 0

BLF6G13LS-250P,112 electronic component of NXP BLF6G13LS-250P,112

Trans RF MOSFET N-CH 100V 42A 5-Pin CDFM Bulk
Stock : 0

BLF6G15L-40RN,112 electronic component of NXP BLF6G15L-40RN,112

RF MOSFET Transistors Pwr LDMOS transistor transistor
Stock : 0

BLF7G15LS-200,112 electronic component of NXP BLF7G15LS-200,112

RF MOSFET Transistors Single 65V 56A 0.048Ohms
Stock : 0

BLF6G10L-260PRN,112 electronic component of NXP BLF6G10L-260PRN,112

BLF6G10L-260PRN,112
Stock : 0

BLF6G20LS-110,112 electronic component of NXP BLF6G20LS-110,112

Transistors RF MOSFET LDMOS TNS
Stock : 0

BLF6G21-10G,112 electronic component of NXP BLF6G21-10G,112

NXP Semiconductors RF MOSFET Transistors TRANSISTOR PWR LDMOS
Stock : 0

BLF7G20L-90P electronic component of NXP BLF7G20L-90P

Trans RF MOSFET N-CH 65V 18A 5-Pin CDFM
Stock : 0

BLF6G10LS-260PRN:112 electronic component of NXP BLF6G10LS-260PRN:112

BLF6G10LS-260PRN:112
Stock : 0

BLF6G13L-250P,112 electronic component of NXP BLF6G13L-250P,112

Trans RF MOSFET N-CH 100V 42A 5-Pin CDFM Bulk
Stock : 0

More Products By Category "RF MOSFET Transistors"

Image Description
BLF6G13LS-250P,112 electronic component of NXP BLF6G13LS-250P,112

Trans RF MOSFET N-CH 100V 42A 5-Pin CDFM Bulk
Stock : 0

BLF6G15L-40RN,112 electronic component of NXP BLF6G15L-40RN,112

RF MOSFET Transistors Pwr LDMOS transistor transistor
Stock : 0

BLF7G15LS-200,112 electronic component of NXP BLF7G15LS-200,112

RF MOSFET Transistors Single 65V 56A 0.048Ohms
Stock : 0

BLF861A electronic component of Advanced Semiconductor BLF861A

Transistors RF MOSFET RF Transistor
Stock : 0

BLF871,112 electronic component of NXP BLF871,112

RF MOSFET Transistors Trans MOSFET N-CH 89V 3-Pin
Stock : 0

BLF884P,112 electronic component of NXP BLF884P,112

RF MOSFET Transistors 50V 240mOhms
Stock : 0

BLF888,112 electronic component of NXP BLF888,112

RF MOSFET Transistors TRANSISTOR RF PWR LDMOS
Stock : 0

BLF8G09LS-270GW,118 electronic component of NXP BLF8G09LS-270GW,118

Power LDMOS transistor
Stock : 0

BLF8G22LS-270GV electronic component of NXP BLF8G22LS-270GV

Trans RF MOSFET N-CH 65V 7-Pin CDFM
Stock : 0

BLL6H0514-25,112 electronic component of NXP BLL6H0514-25,112

NXP Semiconductors RF MOSFET Transistors TRANSISTOR LDMOS DVR
Stock : 0

Additional Infomation About Product

BLF6G10-45 Power LDMOS transistor Rev. 4 1 September 2015 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at T = 25 C in a common source class-AB production test circuit. case Mode of operation f V P G ACPR DS L(AV) p D (MHz) (V) (W) (dB) (%) (dBc) 1 2-carrier W-CDMA 920 to 960 28 1.0 22.5 7.8 48.5 1 Test signal: 3GPP test model 1 64 DPCH PAR = 7.5 dB at 0.01 % probability on CCDF per carrier carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 28 V and an I of 350 mA: Dq Average output power = 1.0 W Gain = 22.5 dB Efficiency = 7.8 % ACPR = 48.5 dBc Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (700 MHz to 1000 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)BLF6G10-45 Power LDMOS transistor 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 700 MHz to 1000 MHz frequency range. 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1drain 1 1 2gate 1 3source 2 3 3 2 sym112 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G10-45 - flanged ceramic package 2 mounting holes 2 leads SOT608A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +13 V GS I drain current - 13 A D T storage temperature 65 +150 C stg T junction temperature - 225 C j 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction T =80 C 1.7 K/W th(j-case) case to case P = 12.5 W L BLF6G10-45 4 All information provided in this document is subject to legal disclaimers. Ampleon B.V. 2015. All rights reserved. Product data sheet Rev. 4 1 September 2015 2 of 12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

Looking for help? Visit our FAQ's Section to answer to all your questions

Resources

Company

Support

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
  +61 8 9358 9358 |   sales@x-on.com.au |   Chat
 
Policies | Terms and Conditions | Sitemap

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted