Product Information

BLF8G22LS-270GV

BLF8G22LS-270GV electronic component of NXP

Datasheet
Trans RF MOSFET N-CH 65V 7-Pin CDFM
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 41.8678 ea
Line Total: USD 4186.78

0 - Global Stock
MOQ: 100  Multiples: 100
Pack Size: 100

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Additional Infomation About Product

BLF8G22LS-270V BLF8G22LS-270GV Power LDMOS transistor Rev. 3 1 September 2015 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at T = 25 C in a common source class-AB production test circuit, tested case on straight lead device. Test signal f I V P G ACPR Dq DS L(AV) p D 5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 1 2-carrier W-CDMA 2110 to 2170 2400 28 80 17.3 29 29 1 3GPP test model 1 64 DPCH PAR = 8.4 dB at 0.01 % probability on CCDF 5 MHz carrier spacing. 1.2 Features and benefits Excellent ruggedness High efficiency Low R providing excellent thermal stability th Designed for broadband operation Decoupling leads to enable improved video bandwidth (80 MHz typical) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for base stations and multi carrier applications in the 2110 MHz to 2170 MHz frequency rangeBLF8G22LS-270(G)V Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF8G22LS-270V (SOT1244B) 1drain 451 1 2gate 4,5 6,7 1 3source 2 4 video lead 3 3 aaa-003619 5 video lead 6n.c. 672 7n.c. BLF8G22LS-270GV (SOT1244C) 1drain 451 1 2gate 4,5 6,7 1 3source 2 4 video lead 3 aaa-003619 5 video lead 672 6n.c. 3 7n.c. 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF8G22LS-270V - earless flanged ceramic package 6 leads SOT1244B BLF8G22LS-270GV - earless flanged ceramic package 6 leads SOT1244C 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +13 V GS T storage temperature 65 +150 C stg T junction temperature - 225 C j BLF8G22LS-270V 8G22LS-270GV 3 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 1 September 2015 2 of 16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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