Product Information

BLL1214-35,112

BLL1214-35,112 electronic component of NXP

Datasheet
RF MOSFET Transistors BULK TNS-MICP
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 229.9728 ea
Line Total: USD 4599.46

0 - Global Stock
MOQ: 20  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 20
Multiples : 1
20 : USD 229.9728

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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Additional Infomation About Product

BLL1214-35 L-band radar LDMOS driver transistor Rev. 2 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. Philips Semiconductors Product specication L-band radar LDMOS driver transistor BLL1214-35 FEATURES PINNING - SOT467C High power gain PIN DESCRIPTION Easy power control 1 drain Excellent ruggedness 2 gate Source on mounting base eliminates DC isolators, 3 source, connected to ange reducing common mode inductance. APPLICATIONS 1 L-band radar applications in the 1200 to 1400 MHz frequency range. 3 DESCRIPTION 2 Silicon N-channel enhancement mode lateral D-MOS MBK584 Top view transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the flange. Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at T =25 C in a common source test circuit. h f V P G DS L p D MODE OF OPERATION (MHz) (V) (W) (dB) (%) Pulsed class-AB 1200 to 1400 36 35 >13 >43 t=1ms =10% LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V drain-source voltage - 75 V DS V gate-source voltage - 15 V GS P total power dissipation under RF conditions T 25 C - 110 W tot h T storage temperature - 65 +150 C stg T junction temperature - 200 C j 2002 Sep 27 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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