Product Information

BLF571,112

BLF571,112 electronic component of NXP

Datasheet
RF MOSFET Transistors Trans MOSFET N-CH 110V 3.6A 3-Pin

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 72.4052 ea
Line Total: USD 72.41

0 - Global Stock
MOQ: 1  Multiples: 60
Pack Size: 60
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 60
1 : USD 72.4052
10 : USD 68.2092

     
Manufacturer
Product Category
Transistor Polarity
Id - Continuous Drain Current
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Maximum Operating Temperature
Mounting Style
Packaging
Package Case
Brand
Forward Transconductance Min
Rds On Drain Source Resistance
Factory Pack Quantity :
Vds Drain Source Breakdown Voltage
Vgs Gate Source Breakdown Voltage
Vgs Th Gate Source Threshold Voltage
Rohs Mouser
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BLF571 HF / VHF power LDMOS transistor Rev. 3 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the HF and VHF band. Table 1. Production test performance Mode of operation f V P G DS L p D (MHz) (V) (W) (dB) (%) CW 225 50 20 27.5 70 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an I Dq of 50 mA: Average output power = 20 W Power gain = 27.5 dB Efficiency = 70 % Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (10 MHz to 500 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Industrial, scientific and medical applications Broadcast transmitter applicationsBLF571 HF / VHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 drain 1 1 2 gate 1 3 source 3 2 3 2 sym112 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF571 - flanged LDMOST ceramic package 2 mounting holes SOT467C 2 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 110 V DS V gate-source voltage 0.5 +11 V GS I drain current - 3.6 A D T storage temperature 65 +150 C stg T junction temperature - 225 C j 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction to case T = 80 C P = 20 W 2.9 K/W th(j-c) case L BLF571 3 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 1 September 2015 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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