Product Information

BFS540,115

BFS540,115 electronic component of NXP

Datasheet
RF Bipolar Transistors TAPE-7 TNS-RFSS
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1579 ea
Line Total: USD 473.7

0 - Global Stock
MOQ: 3000  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 3000
Multiples : 1
3000 : USD 0.1579

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BFS540 NPN 9 GHz wideband transistor Product specification 2000 May 30 Supersedes data of 1997 Dec 05NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 FEATURES DESCRIPTION High power gain NPN transistor in a SOT323 plastic package. Low noise figure 3 handbook, 2 columns High transition frequency PINNING Gold metallization ensures excellent reliability PIN DESCRIPTION SOT323 package. 12 1base Top view MBC870 2 emitter APPLICATIONS 3 collector RF wideband amplifier applications Marking code: N4. such as satellite TV systems and RF portable communication equipment Fig.1 SOT323. with signal frequencies up to 2 GHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 15 V CEO I DC collector current 120 mA C P total power dissipation T 80 C note 1 500 mW tot s h DC current gain I =40mA V =8V T =25 C 100 120 250 FE C CE j f transition frequency I =40mA V =8V f= 1GHz 9 GHz T C CE T =25 C amb G maximum unilateral power gain I =40mA V = 8 V f = 900 MHz 14 dB UM C CE T =25 C amb Fnoise figure I =10mA V = 8 V f = 900 MHz 1.3 1.7 dB C CE T =25 C amb Note 1. T is the temperature at the soldering point of the collector tab. s LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage R =0 15 V CES BE V emitter-base voltage open collector 2.5 V EBO I DC collector current 120 mA C P total power dissipation T 80 C note 1 500 mW tot s T storage temperature 65 150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s 2000 May 30 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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