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BFT25

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RF TRANSISTOR, NPN, SOT-23

Manufacturer: NXP

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.6591 ea
Line Total: USD 0.66

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 24 May to Thu. 30 May MOQ : 1 Multiples : 1 BFT25 NXP	1 : USD 0.6591 10 : USD 0.546 100 : USD 0.3331 1000 : USD 0.2566 3000 : USD 0.2192 9000 : USD 0.2044

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor Product specification November 1992NXP Semiconductors Product specification NPN 2 GHz wideband transistor BFT25 DESCRIPTION PINNING NPN transistor in a plastic SOT23 PIN DESCRIPTION envelope. Code: V1p It is primarily intended for use in RF 1base lfpage 3 low power amplifiers, such as in 2emitter pocket phones, paging systems, etc. 3 collector The transistor features low current consumption (100 A to 1 mA) due to its high transition frequency, it also 12 has excellent wideband properties Top view MSB003 and low noise up to high frequencies. Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V collector-base voltage open emitter 8V CBO V collector-emitter voltage open base 5V CEO I DC collector current 6.5 mA c P total power dissipation up to T =167 C note 1 30 mW tot s f transition frequency I =1mA V = 1 V f = 500 MHz 2.3 GHz T C CE T =25 C amb C feedback capacitance I =1mA V = 1 V f = 1 MHz 0.45 pF re C CE =25 C T amb G maximum unilateral power gain I =1mA V = 1 V f = 500 MHz 18 dB UM C CE T =25 C amb Fnoise figure I =1mA V = 1 V f = 500 MHz 3.8 dB C CE T =25 C amb LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 8V CBO V collector-emitter voltage open base 5V CEO V emitter-base voltage open collector 2V EBO I DC collector current 6.5 mA C I peak collector current f 1 MHz 10 mA CM P total power dissipation up to T = 167 C note 1 30 mW tot s T storage temperature 65 150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s November 1992 2

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Manufacturer NXP NXP
Product Category Unclassified Unclassified
Transistor Polarity Npn Npn
Collector Emitter Voltage Vbrceo 5 V 5 V
Transition Frequency Ft 2.3Ghz 2.3Ghz
Power Dissipation Pd 30 mW 30 mW
Dc Collector Current 6.5 mA 6.5 mA
Dc Current Gain Hfe 40 40
Rf Transistor Case Sot-23 Sot-23
No Of Pins 3 3
Operating Temperature Max 175 C 175 C
Msl - -
Svhc No Svhc (15-Jun-2015) No Svhc (15-Jun-2015)
Continuous Collector Current Ic 6.5 mA 6.5 mA
Continuous Collector Current Ic Max 10 mA 10 mA
Current Ic Continuous A Max 6.5 mA 6.5 mA
Current Ic Hfe 1 mA 1 mA
Gain Bandwidth Ft Typ 1.2Ghz 1.2Ghz
Hfe Min 20 20
No Of Transistors 1 1
Noise Figure Typ 3.8Db 3.8Db
Packaging Cut Tape Cut Tape
Power Dissipation Ptot Max 30 mW 30 mW
Smd Marking Bft25 Bft25
Termination Type Smd Smd
Test Frequency 500Mhz 500Mhz
Transistor Case Style Sot-23 Sot-23
Voltage Vcbo 8 V 8 V