DMC3021LK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I max 0.6mm Profile Ideal for Low Profile Applications D Device V R max (BR)DSS DS(ON) 2 T = +25C PCB Footprint of 4mm C 14A Low Gate Threshold Voltage 21m V = 10V GS Q1 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 32m V = 4.5V 14A GS Halogen and Antimony Free. Green Device (Note 3) 39m V = -10V -14A GS Q2 -30V Qualified to AEC-Q101 Standards for High Reliability 53m V = -4.5V -14A GS Mechanical Data Description and Applications Case: TO252-4 This MOSFET has been designed to minimize the on-state resistance Case Material: Molded Plastic,Gree Molding Compound UL (R ) and yet maintain superior switching performance, making it DS(ON) Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminal Connections Indicator: See diagram Power Management Functions Terminals: Finish Matte Tin annealed over Copper leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Backlighting Weight: 0.027 grams (approximate) TO252-4L D D D G2 G1 D S2 S1 S2 G2 S1 G1 Top View Bottom View Pinout Top View N-Channel MOSFET P-Channel MOSFET Ordering Information (Note 4) Part Number Case Packaging DMC3021LK4-13 TO252-4 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC3021LK4 Maximum Ratings N-CHANNEL Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 9.4 A Continuous Drain Current (Note 6) V = 10V A I GS D State 7.5 T = +70C A Steady T = +25C 14 C Continuous Drain Current (Note 6) V = 10V I A GS D State T = +70C 14 C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 70 A DM Avalanche Current, (Notes 7) L = 0.1mH I 16 A AS Avalanche Energy, (Notes 7) L = 0.1mH E 13 mJ AS Maximum Ratings P-CHANNEL Q2 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Steady -6.8 T = +25C A A Continuous Drain Current (Note 6) V = -10V I GS D State -5.3 T = +70C A Steady T = +25C -14 C Continuous Drain Current (Note 6) V = -10V I A GS D State T = +70C -14 C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -50 A DM Avalanche Current, (Notes 7) L = 0.1mH I -16 A AS Avalanche Energy, (Notes 7) L = 0.1mH 13 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units = +25C 2.7 T A Total Power Dissipation (Note 6) 1.7 T = +70C A P W D 22 T = +25C C Total Power Dissipation (Note 6) 14 T = +70C C Thermal Resistance, Junction to Ambient (Note 6) Steady state 46 R JA C/W Thermal Resistance, Junction to Case (Note 6) Steady state R 5.5 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 7. I and E rating are based on low frequency and duty cycles to keep T = 25C AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 10 April 2014 DMC3021LK4 Diodes Incorporated www.diodes.com Document number: DS35082 Rev. 5 - 2 NEW PRODUCT