VS-VSUD405CW60 www.vishay.com Vishay Semiconductors FRED Pt , Ultrafast Soft Recovery Diode, 400 A FEATURES Ultrafast recovery Terminal Terminal UL approved file E222165 anode 1 anode 2 Designed for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Base common BENEFITS TO-244 cathode Reduced RFI and EMI Higher frequency operation Reduced snubbing PRIMARY CHARACTERISTICS I 400 A Reduced parts count F(AV) V 600 V R DESCRIPTION / APPLICATIONS Q (typical) 1466 nC rr t 124 ns FRED Pt diodes are optimized to reduce losses and rr EMI/RFI in high frequency power conditioning systems. The Type Modules - diode, FRED Pt softness of the recovery eliminates the need for a snubber in Package TO-244 most applications. These devices are ideally suited for HF Circuit configuration Two diodes common cathode welding, power converters and other applications where switching losses are significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Cathode to anode voltage V 600 V R T = 25 C 480 C Continuous forward current per diode I T = 85 C 338 F(DC) C A T = 132 C 200 C Single pulse forward current per diode I T = 25 C 2880 FSM C T = 25 C 789 C Maximum power dissipation per diode P W D T = 124 C 270 C Operating junction and storage T , T -40 to +175 C J Stg temperatures ELECTRICAL SPECIFICATIONS PER DIODE (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage V I = 100 A 600 - - BR R I = 200 A - 1.13 1.36 F I = 400 A - 1.27 1.72 V F Forward voltage V FM I = 200 A, T = 175 C - 0.92 - F J I = 400 A, T = 175 C - 1.07 - F J Reverse leakage current I T = 175 C, V = V rated - 0.6 3.0 mA RM J R R Series inductance L From top of terminal hole to mounting plane - 5 - nH S Revision: 14-Dec-2018 Document Number: 94687 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-VSUD405CW60 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS T = 25 C - 124 - J Reverse recovery time t ns rr T = 125 C - 222 - J I = 50 A, F T = 25 C - 24 - J Peak recovery current I dI /dt = 500 A/s, A RRM F T = 125 C - 45 - J V = 200 V R T = 25 C - 1466 - J Reverse recovery charge Q nC rr T = 125 C - 5000 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLMIN.TYP.MAX.UNITS per diode - - 0.19 Thermal resistance, junction to case R per thJC - - 0.095 C/W module Thermal resistance, case to heatsink per module R -0.10- thCS -68 - g Weight -2.4 - oz. Mounting torque 30 (3.4) - 40 (4.6) lbf in Mounting torque center hole 12 (1.4) - 18 (2.1) (N m) Terminal torque 30 (3.4) - 40 (4.6) Vertical pull - - 80 lbf in 2 lever pull - - 35 Case style TO-244 1000 1000 T = 175 C J 100 T = 175 C J T = 125 C 100 10 J T = 125 C 1 J 10 0.1 T = 25 C J T = 25 C 0.01 J 1 0.001 0 0.5 1.0 1.5 2.0 2.5 0 100 200 300 400 500 600 V -Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg) (Per Leg) Revision: 14-Dec-2018 Document Number: 94687 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R