333 3 VSSC8L45-M3 www.vishay.com Vishay General Semiconductor Surface-Mount TMBS (Trench MOS Barrier Schottky) Rectifier FEATURES Low profile package Ideal for automated placement Trench MOS Schottky technology Low power losses, high efficiency Low forward voltage drop SMC (DO-214AB) Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Cathode Anode Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS 3D Models For use in high frequency converters, freewheeling diodes, DC/DC converters and polarity protection applications. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: SMC (DO-214AB) I 8.0 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 45 V RRM Base P/N-M3 - halogen-free and RoHS-compliant, I 140 A FSM commercial grade V at I = 8.0 A (T = 125 C) 0.39 V F F A Terminals: matte tin plated leads, solderable per T max. 150 C J J-STD-002 and JESD 22-B102 Package SMC (DO-214AB) M3 suffix meets JESD 201 class 2 whisker test Circuit configuration Single Polarity: color band denotes the cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VSSC8L45 UNIT Device marking code 8L45 Maximum repetitive peak reverse voltage V 45 V RRM (1) I 8.0 F Maximum DC forward current A (2) I 4.9 F Peak forward surge current 10 ms single half sine-wave I 140 A FSM superimposed on rated load Operating junction and storage temperature range T , T -40 to +150 C J STG Notes (1) Units mounted on 3 cm x 3 cm Aluminum, 2 oz. PCB (2) Free air, mounted on recommended copper pad area Revision: 27-Oct-2020 Document Number: 87793 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VSSC8L45-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 4.0 A 0.42 - F T = 25 C A I = 8.0 A 0.48 0.56 F (1) Instantaneous forward voltage V V F I = 4.0 A 0.32 - F T = 125 C A I = 8.0 A 0.39 0.48 F T = 25 C -1.85 A (2) Reverse current V = 45 V I mA R R T = 125 C 13 40 A Typical junction capacitance 4.0 V, 1 MHz C 1216 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VSSC8L45 UNIT (1) R 70 JA Typical thermal resistance C/W (2) R 8 JM Notes (1) Free air, mounted on recommended PCB 2 oz. pad area thermal resistance R - junction to ambient JA (2) Units mounted on 3 cm x 3 cm Aluminum, 2 oz. pad area thermal resistance R - junction to mount JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE VSSC8L45-M3/57T 0.235 57T 850 7 diameter plastic tape and reel VSSC8L45-M3/9AT 0.235 9AT 3500 13 diameter plastic tape and reel Revision: 27-Oct-2020 Document Number: 87793 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000